Resist pattern forming method, substrate processing method, and device manufacturing method

Inactive Publication Date: 2006-01-05
CANON KK
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  • Abstract
  • Description
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  • Application Information

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Benefits of technology

[0013] Briefly, in accordance with the present invention, a resist layer to be formed on a substrate to be processed is made of a resist material having an Y value, calcula

Problems solved by technology

Although the photolithography has been adapted to further miniaturization, the shortening of the wavelength of light sources have raised many problems

Method used

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  • Resist pattern forming method, substrate processing method, and device manufacturing method
  • Resist pattern forming method, substrate processing method, and device manufacturing method
  • Resist pattern forming method, substrate processing method, and device manufacturing method

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Embodiment Construction

[0024] Preferred embodiments of the present invention will now be described with reference to the attached drawings.

[0025]FIG. 1 is a schematic view of a general structure of an exposure apparatus into which a resist pattern forming method according to an embodiment of the present invention is incorporated. In FIG. 1, denoted at 200 is a near-field exposure apparatus that comprises a pressure adjusting container 208, an exposure light source 210, a stage 207, and a pressure adjusting device 209 for adjusting the pressure inside the pressure adjusting container 208.

[0026] Denoted at 100 in FIG. 1 is an exposure mask which is attached to the bottom of the pressure adjusting container 208. As best seen in FIGS. 2A and 2B, this exposure mask 100 comprises a mask supporting member 104, a mask base material 101 and a light blocking film 102. The light blocking film 102 is formed to be held by the mask base material 101 which is a thin-film holding member made of an elastic (resilient) m...

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Abstract

Disclosed is a pattern forming method for forming a resist pattern on a substrate to be processed. The method includes a resist layer forming step for forming a resist layer on the substrate, an exposure step for exposing the resist layer with near-field light, and a developing step for developing the exposed resist layer, wherein the resist layer is made of a resist material having an Y value calculated from a sensitivity curve, not less than 1.6.

Description

FIELD OF THE INVENTION AND RELATED ART [0001] This invention relates to a resist pattern forming method, a substrate processing method and a device manufacturing method. More particularly, the invention concerns technologies based on near-field optical lithography. [0002] In the fields of various electronic devices such as semiconductor devices, for example, which need microprocessing procedures, because of requirements for further enlargement of device density and integration, the pattern size has to be miniaturized more and more. One of the semiconductor manufacturing processes which plays an important role for formation of an extraordinarily fine pattern is a photolithographic process. [0003] The photolithographic process is currently carried out on the basis of reduction projection exposure. The resolution thereof is restricted by diffraction limits of light, and generally it is about one-third of the wavelength of a light source used. Hence, for finer microprocessing, the wavel...

Claims

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Application Information

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IPC IPC(8): G03F7/00
CPCB82Y10/00G03F7/023G03F7/2014G03F7/0392G03F7/0382
Inventor ITO, TOSHIKIMIZUTANI, NATSUHIKOYAMAGUCHI, TAKAKO
Owner CANON KK
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