On-chip integrated ipd packaging structure and its packaging method, three-dimensional packaging structure

Abstract

The invention discloses an on-chip integrated IPD packaging structure, a packaging method thereof, and a three-dimensional packaging structure. The on-chip integrated IPD packaging structure includes a silicon substrate layer, a first layer arranged on the upper and lower surfaces of the silicon substrate layer and communicated through a through-silicon hole penetrating the silicon substrate layer. A metal wiring layer, which is arranged on the dielectric layer on the surface of the first metal wiring layer on the upper surface of the silicon substrate layer, is arranged on the surface of the first dielectric layer and is sequentially stacked with the dielectric layer and the first metal wiring layer to form the first on-chip integrated IPD. Two metal wiring layers, and chips integrated on the silicon substrate layer. In the present invention, the silicon substrate is used as an integrated packaging substrate, and passive components are integrated on the substrate, and the integrated manufacturing of the packaging substrate is adopted to complete the production of components and system integration under the same process flow, without the need for separate processing and production of components. The processing integration is simple, easy to realize 3D integration, and has the advantages of high precision and good consistency, saving the circuit area and making the design more flexible.

Description

technical field [0001] The invention relates to the technical field of IPD (integrated passive device), in particular to an on-chip integrated IPD packaging structure, a packaging method thereof, and a three-dimensional packaging structure. Background technique [0002] The radio frequency system is mainly composed of amplification chips, control chips and passive components. The miniaturization and integration of passive components has attracted much attention. In the entire circuit, passive components such as inductors, capacitors, and filters account for more than 50% of the system volume, and the high-density integration and miniaturization technology of passive components has become a core issue. At present, most passive components are discrete devices, which are integrated on the pcb board by welding or bonding, requiring a large area for welding and through holes, or using LTCC substrates to integrate passive components such as inductors and capacitors, but LTCC belo...

AI Technical Summary

Problems solved by technology

At present, most passive components are discrete devices, which are integrated on the pcb board by welding or bonding, requiring a large area for welding and through holes, or using LTCC substrates to integrate passive components such as inductors and capacitors, but LTCC belongs to the thick film process. At present, the minimum line width of the line is about 80mm, and the line accuracy is about 10mm. The size is large and the accuracy is poor.

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