Lateral PNP transistor and the method of manufacturing the same

a technology of pnp transistor and lateral pnp, which is applied in the direction of transistors, semiconductor devices, electrical devices, etc., can solve the problems of complex circuit design, increased process complexity, and cost, and achieves the elimination of multiple alignment mismatches, accurate control of the width of the base and the collector, and enhanced product performance.

Inactive Publication Date: 2006-03-02
BCD SEMICON MFG
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0010] Additional purpose of this invention is to enhance the performance of products by using LPNP without special and complicated circuit design.
[0011] Further, this invention uses a...

Problems solved by technology

Generally there is no good PNP transistor in most bipolar processes, because this process generally is designed to make the best performance of vertical NPN transistor.
Although the vertical PNP may be added into the manufact...

Method used

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  • Lateral PNP transistor and the method of manufacturing the same
  • Lateral PNP transistor and the method of manufacturing the same
  • Lateral PNP transistor and the method of manufacturing the same

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Embodiment Construction

[0021] Please referring FIG. 2˜FIG. 10 at the same time, the descriptions of these figures show as below:

[0022] Referring now to the FIG. 2, an N-type buried layer 21, which is made by N-type implant and drive-in, is formed on the surface of P-type doping substrate 20. These layers all formed according to well-known semiconductor processing techniques. The P-type buried layers 211 , which is made by P-type implant and drive-in processes, surround around the N-type buried layer 21. Next, the N-type epi layer 22 and N-type field implant layer 220 are formed sequentially on the surface of substrate 20, N-type buried layer 21, and P-type buried layers 211. Furthermore, the deep N+-type sinker areas, which are made by photolithography, etch, and N+-sinker doping processes downward the surface of field implant layer 220, formed on top of the buried layer 21. Next, the oxide layer 24 is formed on the N-type field implant layer 220. Finally, the resist mask layers 31, which define the regi...

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Abstract

The present invention relates to a lateral PNP transistor and the method of manufacturing the same. The medium doping N-type base area and the light doping P− collector area were first introduced in the structure before the formation of P+ doping emitter area and the collector area. The emitter-base-collector doping profile in the lateral and the base width of LPNP were similar to NPN. The designer can optimize the doping profile and area size of each area according to the request of the current gain (Hfe), collector-base breakdown voltage (BVceo), and Early voltage (VA) of LPNP transistor. These advantages may cause to reduce the area and enhance performance of the LPNP transistor.

Description

FIELD OF THE INVENTION [0001] This invention is related to a lateral PNP transistor and the method of manufacturing the same. The invented lateral PNP transistor is mainly aimed at power driver and power output application to reduce the chip area and enhance the performance of products. BACKGROUND OF THE INVENTION [0002] The common tendency of microelectronic circuit is to integrate more functions on the chip in order to increase the widely applications of electric circuit, reduce the size and power consumption of system, and lower the price of devices. Although the bipolar transistor and bipolar process technology do not suit all applications, they are some key foundations for other extended process technology, like BiCMOS and BiCDMOS, for a long time. [0003] Generally there is no good PNP transistor in most bipolar processes, because this process generally is designed to make the best performance of vertical NPN transistor. Although the vertical PNP may be added into the manufactu...

Claims

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Application Information

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IPC IPC(8): H01L27/082
CPCH01L21/8249H01L29/735H01L29/6625
Inventor REN, CHONGLIU, XIAN FENGQIU, BIN
Owner BCD SEMICON MFG
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