Ion beam implant current, spot width and position tuning

Abstract

An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.

Description

BACKGROUND OF THE INVENTION [0001] 1. Technical Field [0002] The present invention relates generally to ion implanter systems, and more particularly, to a method, system and program product for tuning an ion implanter system to maximize ion beam implant current by using an estimated implant current, and to position the ion beam along a desired ion beam path by using a spot beam center. [0003] 2. Related Art [0004] Ion implantation processes typically require a uniform and consistent dose or amount of ions to be implanted into a semiconductor wafer. Dose is generally a function of ion beam current density and time that the wafer spends in front of an ion beam. Referring to FIG. 1, conventional single wafer ion implanters typically provide an ion beam that is horizontally an electro-statically scanned spot beam 4. In order to scan a wafer 6, one conventional approach moves the wafer vertically (as shown by the three wafer 6 positions in FIG. 1) and ion beam 4 is swept horizontally bac...

AI Technical Summary

Benefits of technology

[0010] This invention provides an ion beam tuning method, system and program product for tuning an ion implanter system. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups. With specific regard to reducing ion beam setup time, the invention reduces the need for parallelism and uniformity tuning because a stored corrector magnet setting and uniformity scan waveform slope array will remain constant if ion beam spot width and spot beam center position are maintained same for each ion beam over many setups.

[0011] A first aspect of the invention is directed to a method for tuning an ion beam in an ion implanter system, the method comprising the steps of: obtaining an ion

Problems solved by technology

In particular, oversweep creates a situation in which a fraction of the entire beam is available for use, which impacts ion implanter system productivity.

In so doing, Iwasawa approximates the total ion beam current and ion beam spot width to their preferable states, but does not otherwise attempt to achieve an optimized total ion beam current and optimized ion beam spot width to maximize implant current.

More specifically, it is impossible for Iwasawa to maximize implant current because it is incapable of simultaneo

Images