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Semiconductor device manufacturing method and semiconductor manufacturing apparatus

a semiconductor and manufacturing method technology, applied in semiconductor devices, chemical vapor deposition coatings, coatings, etc., can solve the problems of long maintenance time, inability to complete maintenance, and distortion, so as to reduce the maintenance frequency and suppress or prevent the generation of particles

Inactive Publication Date: 2006-06-08
KOKUSA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

"The present invention provides a method and apparatus for manufacturing silicon nitride films using a thermal chemical vapor deposition method with bis tertiary butyl amino silane and NH3 as raw gases. The method and apparatus can reduce the frequency of maintenance and prevent the formation of particles. The technical effect of the invention is to provide a more efficient and reliable method for producing silicon nitride films in semiconductor device manufacturing."

Problems solved by technology

Since quartz does not shrink or expand by heat and thus, distortion occurs.
Further, there is a problem that it takes 16 hours to complete the maintenance, and this is too long.

Method used

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  • Semiconductor device manufacturing method and semiconductor manufacturing apparatus
  • Semiconductor device manufacturing method and semiconductor manufacturing apparatus
  • Semiconductor device manufacturing method and semiconductor manufacturing apparatus

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Embodiment Construction

[0032] Next, one embodiment of the present invention will be explained with reference to the drawings below.

[0033] Since BTBAS used in the present invention is in a liquid state at room temperature, the BTBAS is introduced into a furnace using a BTBAS supply apparatus shown in FIGS. 2 and 3.

[0034] A BTBAS supply apparatus shown in FIG. 2 is a combination of a thermostatic bath and gas flow rate control. A BTBAS supply apparatus shown in FIG. 3 controls a flow rate by a combination of a liquid flow rate control and a vaporizer.

[0035] Referring to FIG. 2, in the BTBAS supply apparatus 4, an interior of a thermostatic bath 41 containing a BTBAS liquid raw material 42 therein is heated to about 100° C. to increase a vapor pressure of BTBAS, thereby evaporating the BTBAS. Then, the evaporated BTBAS is controlled in flow rate by a mass-flow controller 43, and supplied, from a BTBAS supply port 44, to a supply port 22 of a nozzle 21 of an vertical-type LPCVD (low pressure CVD) film form...

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Abstract

A semiconductor device manufacturing method comprises a first step of forming, by a thermal chemical vapor deposition method, a silicon nitride film on an object disposed in a reaction container, with bis tertiary butyl amino silane and NH3 flowing into the reaction container, and a second step of removing silicon nitride formed in the reaction container, with NF3 gas flowing into the reaction container.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor device manufacturing method and a semiconductor manufacturing apparatus, and more particularly, to a semiconductor device manufacturing method including a silicon nitride film manufacturing step using a thermal CVD (Chemical Vapor Deposition) method, and to a semiconductor manufacturing apparatus preferably used for the method. [0003] 2. Description of the Related Art [0004] Conventionally, it is common that a silicon nitride film used in a semiconductor device is formed using mixed gas of SiH2Cl2 (DCS, hereinafter) and NH3. [0005] According to this method, however, it is necessary to form the silicon nitride film at a temperature as high as 700° C. to 800° C. and as a result, there is a problem that impurities are adversely diffused deeply into a shallow diffused layer and a semiconductor device element can not be formed small in size. Further, there is a problem tha...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/31H01L21/302H01L21/314C23C16/34C23C16/44H01L21/311H01L21/318
CPCC23C16/345C23C16/4405H01L21/31116H01L21/3185Y10S438/905H01L21/02271H01L21/02211H01L21/0217
Inventor MIZUNO, NORIKAZUMAEDA, KIYOHIKO
Owner KOKUSA ELECTRIC CO LTD