Method of manufacturing a semiconductor device with different lattice properties

Abstract

To reduce a current loss through a channel and improve electron mobility, a first semiconductor layer and a second semiconductor layer (sequentially formed on a semiconductor substrate) have different lattice properties. The first semiconductor layer and the second semiconductor layer may be etched to form a first semiconductor pattern. A third semiconductor layer having a lattice property substantially identical to that of the first semiconductor layer may be formed over the first semiconductor pattern. The third semiconductor layer may then be etched to form a second semiconductor pattern. A gate may be formed on the second semiconductor pattern. The contact surface between the second semiconductor pattern and the gate pattern may consequently increased to reduce a current loss. Further, the lattice properties may be changed to improve electron mobility of the semiconductor layers.

Description

CROSS REFERENCE TO RELATED APPLICATION(S) [0001] This is a Divisional of, and a claim of priority is made to, U.S. non-provisional application Ser. No. 10 / 801,651, filed Mar. 17, 2004, the contents of which are incorporated herein by reference in their entirety. [0002] A claim of priority is also made to Korean Patent Application No. 2003-16450, filed on Mar. 17, 2003, the contents of which are incorporated herein by reference in their entirety.BACKGROUND OF THE INVENTION [0003] 1. Field of the Invention [0004] The present invention relates to a semiconductor device or a method of manufacturing a semiconductor device. Embodiments of the present invention are capable of reducing current loss in a semiconductor device by increasing the contact surface between channel and a gate. This reduction of current loss may be accomplished by improving electron mobility by manipulating lattice properties of the channel. [0005] 2. Description of the Related Art [0006] Transistors are semiconducto...

AI Technical Summary

Benefits of technology

The present invention relates to an apparatus including a transistor channel with improved electron mobility and efficiency. The transistor channel has an inner portion and an outer portion with strained silicon, which increases the contact surface between the gate and the channel to reduce current loss. The lattice property of the semiconductor layer in the channel is changed to improve electron mobility. The semiconductor device and method of manufacturing the semiconductor device of the invention increase the surface contacting the gate, improve the lattice property of the semiconductor layer, improve current flow through the channel, and reduce electric power consumption. The semiconductor device includes a first structure and a second structure with different lattice properties, which make contact with the source and drain regions of the semiconductor substrate. The third semiconductor pattern has a lattice property substantially identical to the first semiconductor pattern. The invention improves the efficiency and performance of the semiconductor device.

Problems solved by technology

Further, downsizing decreases the time needed for electrons to pass through a transistor, which reduces processing time of a transistor.

Some complications exist in fabrication techniques of MOSFETs having a width less than about 0.1 μm.

There are some obstacles in manufacturing techniques of CMOS transistors, having widths less than about 0.1 μm.

These obstacles may be due to limited space charge layers, tunneling effects, and / or non-uniform doping.

These obstacles may arise during lithography, forming gate oxide layers, forming shallow source / drain extensions, and / or forming halo pocket / retrograde wells in small-scale parameters.

Reducing the semiconductor device scale has some limitations since the shape description technique for an integrated circuit has not been secured in a scale less than about 100 nm.

When the channel width is below about 90 nm, however, a short channel effect and a current leakage through the gate oxide layer may occur.

However, prior to the present invention, Tri-Gate devices have not been utilized in conjunction with strained silicon.

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