Vertical electrode structure of gallium nitride based light emitting diode

a technology of light-emitting diodes and vertical electrodes, which is applied in the direction of basic electric elements, electrical equipment, and semiconductor devices, can solve the problems of short life, high manufacturing cost, and failure of present used traffic signals of lamps, so as to reduce the loss of fresnel refraction, advance the external luminous efficiency, and facilitate reflection
US20070018178A1Inactive Publication Date: 2007-01-25LAI MU JEN +1
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
LAI MU JEN
Publication Date
2007-01-25
Estimated Expiration
Not applicable · inactive patent

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Abstract

A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and further advances the luminous efficiency. Moreover, the further included metal reflecting layer causes the reflection without the selective angle of incidence, thus increasing the coverage of the reflecting angles and further reflecting the light emitted from a light emitting layer effectively. In addition, the invented structure can also advance the function of heat elimination and the electrostatic discharge (ESD) so as to the increase the operating life of the component and to be applicable to the using under the high current driving. Moreover, the vertical electrode structure of the present invention is able to lower down the manufacturing square of the chip and facilitate the post stage of the conventional wire bonding process.
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Description

[0001] This application is a Divisional patent application of co-pending application Ser. No. 10 / 986,126, filed on 12 Nov. 2004.BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention is related to a kind of vertical electrode structure of GaN-based light emitting diode. The GaN-based light emitting diode especially refers to a kind of diode with vertical electrode structure, which can effectively reduce Fresnel refraction loss and the total reflection, and further advance the external luminous efficiency.

[0004] 2. Description of the Related Art

[0005] Accordingly, the application purpose to study the blue light emitting diode is to manufacture the full-color display, traffic light, and luminescent source. Nowadays, the prevailing various light emitting diodes in the market so far are with a variety of lights including red, green, orange, and yellow lights. However, as to the blue and green light emitting diodes, the practical degrees of high effic...

Claims

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