Vertical electrode structure of gallium nitride based light emitting diode

Abstract

A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and further advances the luminous efficiency. Moreover, the further included metal reflecting layer causes the reflection without the selective angle of incidence, thus increasing the coverage of the reflecting angles and further reflecting the light emitted from a light emitting layer effectively. In addition, the invented structure can also advance the function of heat elimination and the electrostatic discharge (ESD) so as to the increase the operating life of the component and to be applicable to the using under the high current driving. Moreover, the vertical electrode structure of the present invention is able to lower down the manufacturing square of the chip and facilitate the post stage of the conventional wire bonding process.

Description

[0001] This application is a Divisional patent application of co-pending application Ser. No. 10 / 986,126, filed on 12 Nov. 2004.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention is related to a kind of vertical electrode structure of GaN-based light emitting diode. The GaN-based light emitting diode especially refers to a kind of diode with vertical electrode structure, which can effectively reduce Fresnel refraction loss and the total reflection, and further advance the external luminous efficiency. [0004] 2. Description of the Related Art [0005] Accordingly, the application purpose to study the blue light emitting diode is to manufacture the full-color display, traffic light, and luminescent source. Nowadays, the prevailing various light emitting diodes in the market so far are with a variety of lights including red, green, orange, and yellow lights. However, as to the blue and green light emitting diodes, the practical degrees of high effic...

AI Technical Summary

Benefits of technology

"The present invention provides a vertical electrode structure for a GaN-based light emitting diode that has good ohmic contact with a N-type ohmic contact layer, conductivity, and transparency. The structure includes an oxide window layer that reduces Fresnel refraction loss and total reflection, and a metal reflection layer that enhances reflection without selective angle of incidence. This structure improves external luminous efficiency, increases operating life, and is suitable for high current driving. Additionally, the structure decreases manufacturing area of chip and facilitates wire bonding process."

Problems solved by technology

In addition, the present used traffic signals of lamp have the failures of energy consuming, short life, and the phantom image of illuminating (which occurs as the sunlight reflects off the display surface and easily causes the traffic accident).

Although the silicon carbide substrate with the conductive characteristic can be made into vertical electrode, the manufacturing cost is very expensive.

However, it has to make the lateral electrode structure if adopting the insulating substrate, which contributes the unavailability of the vertical electrode.

This being the case, it would take the special wire bonding apparatus and packing technology, and additionally, the manufacturing area of chip will also increase relatively, thus complicating the manufacturing process and increase the cost of each component.

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