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Embedded phase-change memory and method of fabricating the same

Inactive Publication Date: 2007-07-26
ELECTRONICS & TELECOMM RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0015] The present invention provides an embedded memory requi

Problems solved by technology

A vertical-structured pnp-type bipolar transistor can secure a high power density with a cell size of only 5F2˜8F2, but is not often used due to difficulty in processing.
However, DRAM and SRAM are volatile, losing stored information when power is turned off, and FeRAM needs fastidious fabrication for a reliable device.

Method used

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  • Embedded phase-change memory and method of fabricating the same
  • Embedded phase-change memory and method of fabricating the same
  • Embedded phase-change memory and method of fabricating the same

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first embodiment

[0036]FIGS. 2A through 2F are sectional views illustrating a method of fabricating the embedded memory according to a first embodiment of the present invention. In this case, for convenience of description, the embedded memory is divided into an HBT region where a bipolar transistor will be formed, a phase-change memory region where a phase-change memory device will be formed, and a CMOS TR region where a CMOS transistor will be formed.

[0037] Referring to FIG. 2A, an HBT buried layer 102, a collector 104, and a collector connection layer 106 are formed on a semiconductor substrate 100 of the bipolar transistor (HBT) region, using photolithography, ion implantation, epitaxial growth and thermal treatment. In the CMOS TR region, a CMOS TR buried layer 110 and a well 112 are formed. The phase-change memory region where the phase-change memory device will be later formed outside the HBT region and the CMOS TR region. The collector 104 and the collector connection layer 106, and the col...

second embodiment

[0046]FIG. 3 is a sectional view illustrating a method of fabricating the embedded memory according to a second embodiment of the present invention. In this case, the structure and manufacture of the HBT region and the CMOS TR region, but not the phase-change memory region, are identical to those of the first embodiment described with reference to FIGS. 2A through 2F.

[0047] Referring to FIG. 3, the phase-change memory region includes a buried layer 202 and a well 204 sequentially formed for a phase-change memory device. The well 204 has a surface exposed by an insulating layer 206, and a heating layer 208 covers the exposed surface of the well 204 and a portion of the insulating layer 206. The heating layer 208 is covered with a protection layer 210, and the protection layer 210 is partially removed to allow a phase-change material pattern 156 to contact the heating layer 208.

[0048] In the embedded memory and the method of fabricating the same according to the present invention, a...

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Abstract

An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.

Description

CROSS-REFERENCE TO RELATED PATENT APPLICATION [0001] This application claims the benefit of Korean Patent Application No. 10-2005-0120101, filed on Dec. 8, 2005, and 10-2006-0038331, filed on Apr. 27, 2006 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to an embedded phase-change memory and a method of fabricating the same, and more particularly, to an embedded phase-change memory that carries out a memory function within a System On Chip (SOC), and a method of fabricating the same. [0004] 2. Description of the Related Art [0005] Phase-change memories are non-volatile memories which maintain stored information even without a power supply. The phase-change memory includes a phase-change material whose electrical resistance changes depending on its crystalline structure. The phase-change material generally consists ...

Claims

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Application Information

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IPC IPC(8): G11C19/08H01L21/8249H01L31/00H01L31/117
CPCG11C13/0004G11C13/0069G11C2013/008G11C2213/79H01L21/8249H01L45/144H01L27/2445H01L45/06H01L45/126H01L45/143H01L27/0635Y10S438/947H10B63/32H10N70/231H10N70/8413H10N70/8825H10N70/8828
Inventor LEE, SEUNG-YUNRYU, SANGOUKYOON, SUNG MINPARK, YOUNG SAMCHOI, KYU-JEONGLEE, NAM-YEALYU, BYOUNG-GON
Owner ELECTRONICS & TELECOMM RES INST