Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions

a technology of semiconductor thin films and compositions, applied in the direction of coatings, electrical appliances, basic electric elements, etc., can solve the problems of not quite reproducible, disappointing properties of thin films formed from such compounds, and difficult to make semiconducting thin films of commercial qualities and quantities, etc., to reduce the volatility of compositions, increase the average molecular weight, and increase the viscosity
US20080022897A1Inactive Publication Date: 2008-01-31ZURCHER FABIO +6
21 Cites 41 Cited by

Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
ZURCHER FABIO
Publication Date
2008-01-31
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

Methods for forming doped silane and / or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized / polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and / or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing / recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.”
Need to check novelty before this filing date? Find Prior Art

Description

RELATED APPLICATIONS

[0001] This application is a continuation of U.S. application Ser. No. 10 / 949,013 (Attorney Docket No. IDR0302), filed Sep. 24, 2004, pending, which is incorporated herein by reference in its entirety.FIELD OF THE INVENTION

[0002] The present invention generally relates to the fields of doped silane and semiconductor thin films and thin film structures, methods of forming doped silane and semiconductor thin films, and doped liquid phase silane compositions useful in such methods. DISCUSSION OF THE BACKGROUND

[0003] There are a number of silanes that are liquid at ambient temperatures (e.g., from about 15° C. to about 30° C.) or that can be formulated into an ink composition that is liquid at ambient temperatures. Liquid silanes, such as cyclopentasilane or cyclohexasilane, have been investigated as candidate “liquid silicon” precursors. However, to date, it has been challenging to make semiconducting thin films of commercial qualities and quantities from “liquid...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More