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Chemically amplified negative resist composition and patterning process

a negative resist and composition technology, applied in the field of chemically amplified negative resist composition, can solve the problems of often occurring undercutting problems, and achieve the effects of reducing the formation of bridges between pattern features, good profile and high resolution

Inactive Publication Date: 2008-10-02
SHIN ETSU CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a chemically amplified negative resist composition that can form a pattern with few bridges and minimal substrate dependence. This is achieved by introducing electron withdrawing groups into the polymer to increase the number of active sites for crosslinking with a crosslinker. The resulting resist composition has a high resolution and low bridge problem when patterned. The polymer may also include recurring units having the general formula (3) to enhance etch resistance and reduce the thickness of the resist coating. The process of forming a resist pattern on a substrate using this composition ensures a good pattern profile even when applied to a transition metal compound surface.

Problems solved by technology

In the processing of a photomask substrate wherein a substrate surface is of a transition metal compound, an undercut problem often arises in a resist pattern formed on the surface.

Method used

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  • Chemically amplified negative resist composition and patterning process
  • Chemically amplified negative resist composition and patterning process
  • Chemically amplified negative resist composition and patterning process

Examples

Experimental program
Comparison scheme
Effect test

synthesis example 1

[0093]A 3-L flask was charged with 238.0 g of acetoxystyrene, 22.6 g of 4-chlorostyrene, 189.4 g of indene, and 675 g of toluene as a solvent. The reactor was cooled to −70° C. in a nitrogen blanket, followed by three repeated cycles of vacuum evacuation and nitrogen flow. The reactor was warmed to room temperature, fed with 40.5 g of 2,2′-azobis(2,4-dimethylvaleronitrile), V-65 (Wako Pure Chemical Industries, Ltd.) as a polymerization initiator, and heated at 45° C. whereupon reaction took place for 20 hours. The temperature was then raised to 55° C. whereupon reaction took place for a further 20 hours. The reaction solution was concentrated to a half volume and precipitated in 15.0 L of methanol. The resulting white solids were collected by filtration and dried in vacuum at 40° C., yielding 311 g of a white polymer.

[0094]The polymer was dissolved again in 488 g of methanol and 540 g of tetrahydrofuran, whereupon 162 g of triethylamine and 32 g of water were added to the polymer so...

synthesis example 2

[0100]A 3-L flask was charged with 212.0 g of acetoxystyrene, 20.4 g of 4-bromostyrene, 188.1 g of indene, and 675 g of toluene as a solvent. The reactor was cooled to −70° C. in a nitrogen blanket, followed by three repeated cycles of vacuum evacuation and nitrogen flow. The reactor was warmed to room temperature, fed with 40.5 g of 2,2′-azobis(2,4-dimethylvaleronitrile), V-65 (Wako Pure Chemical Industries, Ltd.) as a polymerization initiator, and heated at 45° C. whereupon reaction took place for 20 hours. The temperature was then raised to 55° C. whereupon reaction took place for a further 20 hours. The reaction solution was concentrated to a half volume and precipitated in 15.0 L of methanol. The resulting white solids were collected by filtration and dried in vacuum at 40° C., yielding 320 g of a white polymer.

[0101]The polymer was dissolved again in 488 g of methanol and 540 g of tetrahydrofuran, whereupon 162 g of triethylamine and 32 g of water were added to the polymer sol...

synthesis example 3

[0107]A 3-L flask was charged with 222.0 g of acetoxystyrene, 37.1 g of 4-methoxycarbonylstyrene, 178.3 g of indene, and 675 g of toluene as a solvent. The reactor was cooled to −70° C. in a nitrogen blanket, followed by three repeated cycles of vacuum evacuation and nitrogen flow. The reactor was warmed to room temperature, fed with 40.1 g of 2,2′-azobis(2,4-dimethylvaleronitrile), V-65 (Wako Pure Chemical Industries, Ltd.) as a polymerization initiator, and heated at 45° C. whereupon reaction took place for 20 hours. The temperature was then raised to 55° C. whereupon reaction took place for a further 20 hours. The reaction solution was concentrated to a half volume and precipitated in 15.0 L of methanol. The resulting white solids were collected by filtration and dried in vacuum at 40° C., yielding 299 g of a white polymer.

[0108]The polymer was dissolved again in 488 g of methanol and 540 g of tetrahydrofuran, whereupon 162 g of triethylamine and 32 g of water were added to the p...

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Abstract

A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 μm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This non-provisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. 2007-087243 filed in Japan on Mar. 29, 2007, the entire contents of which are hereby incorporated by reference.TECHNICAL FIELD[0002]This invention relates to a chemically amplified negative resist composition and more particularly, to a chemically amplified negative resist composition comprising a polymer having aromatic rings for use in processing of semiconductor and photomask substrates, and a patterning process using the same.BACKGROUND ART[0003]To meet the recent demand for higher integration in integrated circuits, pattern formation to a finer feature size is required. In forming resist patterns with a feature size of 0.2 μm or less, chemically amplified resist compositions utilizing photo-generated acid as the catalyst are typically used in the art because of their high sensitivity and resolution. Often, high-energy radiation such as U...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G03F7/027G03F7/20
CPCG03F7/20G03F7/0382G03F7/004G03F7/0045G03F7/0047G03F7/038
Inventor TAKEDA, TAKANOBUWATANABE, TAMOTSUKOITABASHI, RYUJIMASUNAGA, KEIICHITANAKA, AKINOBUWATANABE, OSAMU
Owner SHIN ETSU CHEM IND CO LTD