Oxygen ion implantation equipment
a technology of oxygen ions and equipment, applied in vacuum evaporation coatings, chemical vapor deposition coatings, coatings, etc., can solve the problem of non-uniform film thickness of the soi layer of the wafer, and achieve good film thickness uniformity and prevent the temperature drop of this portion
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first embodiment
[0018]As shown in FIGS. 1 and 2, oxygen ion implantation equipment 10 is provided with a cylindrical chamber 11 which has a bottom wall 11a on one end face thereof and is open in the other end face thereof, a wafer holder 12 housed in the chamber 11, a disk-shaped cap 13 with which an opening 11c of the chamber 11 is closed, and a plurality of lamp heaters 21 to 25 and 31 to 35 disposed in such a way as to face any one of a plurality of wafers 14 held by the wafer holder 12. The wafer holder 12 includes a rotating shaft 12a which is rotatably placed through the center of the bottom wall 11a of the chamber 11, a motor 12b attached to the outer surface of the bottom wall 11a and rotating the rotating shaft 12a, a disk-shaped base 12c which is placed in the chamber 11 and is fixed with the center thereof fitted onto the tip of the rotating shaft 12a, a plurality of fixed shafts 12d vertically provided on the periphery of the base 12c toward the opening 11c of the chamber 11 concentrica...
second embodiment
[0022]FIG. 3 shows a second embodiment according to the present invention. In FIG. 3, such reference signs as are found also in FIG. 2 denote the same parts. In this embodiment, the number of halogen lamps 21 to 25 of the outer lamps 20 is made larger than the number of halogen lamps 51 and 52 of inner lamps 50. Specifically, the number of halogen lamps 21 to 25 of the outer lamps 20 is five, and the number of halogen lamps 51 and 52 of the inner lamps 50 is two. The five halogen lamps 21 to 25 of the outer lamps 20 face a portion of the wafer 14 facing them, the portion (the upper half of the wafer 14 shown in FIG. 3) lying close to the chamber peripheral wall 11b relative to the center of the wafer 14, and are disposed at regular intervals in the direction of the radius of the wafer 14, and the inner lamps 50 face a portion of the wafer 14 facing them, the portion (the lower half of the wafer 14 shown in FIG. 3) lying close to the rotating shaft relative to the center of the wafer...
example 1
[0026]As shown in FIG. 3, the number of halogen lamps 21 to 25 of the outer lamps 20 was set at five and the number of halogen lamps 51 and 52 of the inner lamps 50 was set at two in order to heat a portion of the wafer 14 into which oxygen ions are implanted, the portion (the upper half of the wafer 14 shown in FIG. 3) lying close to the chamber peripheral wall 11b, more intensively than a portion of the wafer 14 (the lower half of the wafer 14 shown in FIG. 3) which lies close to the rotating shaft. First oxygen ion implantation was performed in such a way that 2.5×1017 oxygen ions / cm2 were implanted at an acceleration energy of 220 keV with the silicon wafer 14 heated to 400° C. with the five halogen lamps 21 to 25 of the outer lamps 20 and the two halogen lamps 51 and 52 of the inner lamps 50. Second oxygen ion implantation was performed in such a way that 4.0×1015 oxygen ions / cm2 were implanted at an acceleration energy of 200 keV with the wafer 14 heated to 40° C. Then, high-t...
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Abstract
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