Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement

Abstract

A sub-atmospheric downstream pressure control apparatus includes a first flow restricting element (FRE); a pressure control chamber (PCC) located in serial fluidic communication downstream from the first FRE; a second FRE located in serial fluidic communication downstream from the PCC; a gas source; and a flow controlling device in serial fluidic communication downstream from the gas source and upstream from the PCC.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a Divisional of U.S. patent application Ser. No. 10 / 563,519 filed on Jun. 20, 2006, which is a National Stage of PCT Application No. PCT / US2004 / 022182 filed on Jul. 8, 2004, which PCT application claims the benefit of U.S. Provisional Application No. 60 / 485,547 filed Jul. 8, 2003. All of the above patent applications, provisional, PCT, and non-provisional, are hereby incorporated by reference to the same extent as though fully contained herein.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]This invention relates to the area of substrate processing and more specifically to apparatus and method for controlling pressure during deposition or etching processes and for effectively removing reactive chemicals from exhaust gas streams.[0004]2. Description of Prior Art[0005]Low-pressure process systems are implemented extensively for semiconductor processing such as chemical vapor deposition (CVD) and etch. Typ...

AI Technical Summary

Benefits of technology

The present invention provides a method for downstream pressure control in deposition and etching chambers with fast response and optimized flow passage. The invention achieves this by introducing a flow controlled draw (FCD) that uses pressure gradients to control the flow of gas and prevent backflow of effluent and particles from the deposition chamber. The FCD is designed to enhance safety, reduce wear, and lower costs compared to existing methods. The invention also provides a method for controlling the pressure in the downstream pressure control chamber (PCC) to prevent damage to the vacuum pumps and improve process stability. The invention also provides an apparatus for downstream pressure control that includes a foreline conduit and flow restriction element (FRE) to control the pressure in the process chamber and suppress backflow of effluent and particles from the deposition chamber. The FCD method and apparatus offer improved safety and environmental protection by effectively converting reactive chemicals into solid inert films and reducing emissions.

Problems solved by technology

However, downstream pressure control and foreline effluent management continue to be maintenance intensive and performance-limiting bottlenecks.

Unfortunately, the mechanical throttle valve is prone for deteriorated performance under most common usage due to the growth of solid deposits on mechanical moving parts.

These deposits can clog the valve or impede the mechanical motion that is necessary for adequate performance.

In addition, the mechanical motion breaks-off deposits and is prone to make particles that are detrimental to process yield.

Throttle valves produce flow turbulences that sometimes affect the process adversely and are further notorious for dislodging particles from the throttle valve vicinity.

In addition, the response of throttle valves to pressure fluctuations is often too slow and tends to develop oscillatory response that impact process results disadvantageously.

The outcomes of throttle valve oscillatory response are disadvantageous process pressure fluctuations and back-flow from the throttle valve area carrying dislodged particles into the process space.

However, pressure control performance was inferior to the throttle valve method.

In particular, time response of gas ballast technique was inadequately slow.

A disadvantageous and inevitable composition change of inflow gas mixture renders this technique inadequate for most CVD and etch processes and for the majority of reactive sputtering processes.

As upstream controlled pressure was deemed inadequate for CVD and etch processes in the prior art, it is not surprising that the method of injecting “ballast” gas upstream to the throttle valve did not produce an improvement to prior art.

However, this method did not produce an improved method for downstream pressure control.

A close look at the method of injecting ballast gas downstream from a throttle and into the inlet of a turbomolecular pump reveals that the method is based on controlling the pumping speed of the pump by forcing the pump into a disadvantageous high-load regime where the pumping speed strongly depends on the inflow (pump “choking” mode).

Accordingly, a maximum pressure of 10 mTorr at the pump inlet does not provide a substantial impact on the flow through a throttle valve during typical low pressure CVD (LPCVD) and etch processes.

In this range the pump behaves disadvantageously with characteristics such as slow and oscillating response to changes, substantial sensitivity to the type of gas, fatigue and extended wear.

Most implementations of this idea produced unsatisfactory results.

However, while it is proven that pumping speed control can serve as a mean to optimize downstream pressure control (performed by any given technique) by setting optimum working pressure point and range for controlling desired process pressure, it is not seen as a possible universal method for throttle valve free downstream pressure-control.

In particular, pumping speed control is not adequate for fast response in the sub-second time-scale.

These deposits can clog the forelines, flake to make particulates and destroy foreline components such as valves, gauges, sensors and pumps.

Most condensed or partially reacted deposits pose also safety hazards upon maintenance.

For example, tetraethoxysilane (TEOS) that is used extensively for SiO2 deposition generates toxic and flammable polymer products mixed with silicone dioxide powder in the foreline.

Upon ambient exposure these highly porous deposits burst into flames and produce highly toxic HF fumes as well as emitting environmentally unfriendly SiF4 gas.

While atmospheric pressure abatement has been proven reliable and adequate for protecting the environment, it did not alleviate the cost, performance and safety deficiencies of solid growth and condensation in the sub-atmospheric foreline and at the pumps.

However, the design suggested by MKS is complicated and does not provide full protection for the conduit walls.

Current mechanical throttle valve technology is slow, creates turbulences and becomes unreliable and maintenance intensive in cases where solid precipitation occur.b. Backflow of downstream effluents and particle from the throttle valve area is a common problem.

Condensation traps that are very common for treating condensates at the sub-atmospheric sections of downstream manifolds are mostly unsatisfactory, and in the case of reactive mixtures are also extremely unsafe.d.

Maintenance and Safety of current technologies is typically inadequate.

Therefore, fast and simple maintenance of forelines to refresh the capacity of solid abatement elements without exposing personal and the environment to hazardous conditions is not available.

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