Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Current-Sense Amplifier With Low-Offset Adjustment and Method of Low-Offset Adjustment Thereof

a technology of current-sense amplifier and low-offset adjustment, which is applied in the direction of amplifiers with semiconductor devices/discharge tubes, dc-amplifiers with dc-coupled stages, etc. it can solve the problems of reducing incorrect data reading, and adversely affecting the quality of a circuit system, so as to reduce the input offset voltage, increase the read speed of memory data, and reduce the offset voltage

Active Publication Date: 2012-11-22
NATIONAL TSING HUA UNIVERSITY
View PDF0 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0005]A primary object of the present invention is to provide a current-sense amplifier with low-offset adjustment and a low-offset adjustment method thereof, so as to overcome the problem of slow memory data read speed due to reduced current detection accuracy caused by the offset voltage of the current-sense amplifier for the memory.
[0006]To achieve the above and other objects, the current-sense amplifier with low-offset adjustment according to the present invention includes a sensing unit, an equalizing unit and a bias compensation unit. The sensing unit has a sense amplifier, a latch circuit, a first precharged bit line, and a second precharged bit line. The equalizing unit is electrically connected to the first and the second precharged bit line for regulating a voltage of the first precharged bit line and a voltage of the second precharged bit line to the same electric potential, so as to reduce an input offset voltage of the current-sense amplifier and accordingly enable increased memory data read speed. The bias compensation unit is electrically connected to the sense amplifier for compensating an offset voltage of the current-sense amplifier, so as to enable increased current detection accuracy and memory data read accuracy.
[0007]To achieve the above and other objects, the low-offset adjustment method according to the present invention is applicable to the compensation of an offset voltage of a current-sense amplifier. The current-sense amplifier includes a sensing unit, an equalizing unit, and a bias compensation unit; and the sensing unit further includes a sense amplifier, a latch circuit, a first precharged bit line, and a second precharged bit line. The low-offset adjustment method includes the following steps: the equalizing unit regulates a voltage of the first precharged bit line and a voltage of the second precharged bit line to the same electric potential, so as to reduce the clock-skew sensitivity of the current-sense amplifier; and the bias compensation unit outputs a compensation voltage to the sense amplifier for compensating an offset voltage of the current-sense amplifier.

Problems solved by technology

Since consumers demand for memory having higher access speed and accuracy but lower power consumption, it has now become an important issue as how to develop a memory with increased data access speed and accuracy to satisfy the market demands.
The offset voltage would adversely affect the quality of a circuit system.
In a current-sense amplifier for memory, an input offset voltage thereof would cause unstable current detection accuracy to thereby reduce the memory data read speed and accordingly, result in incorrect data reading.
However, due to the amplifier's circuit structure, the compensation effect is adversely affected and fails to achieve ideal compensation, which in turn hinders the memory from providing increased data read speed and accuracy.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Current-Sense Amplifier With Low-Offset Adjustment and Method of Low-Offset Adjustment Thereof
  • Current-Sense Amplifier With Low-Offset Adjustment and Method of Low-Offset Adjustment Thereof
  • Current-Sense Amplifier With Low-Offset Adjustment and Method of Low-Offset Adjustment Thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018]The present invention will now be described with some preferred embodiments thereof and with reference to the accompanying drawings. For the purpose of easy to understand, elements that are the same in the preferred embodiments are denoted by the same reference numerals.

[0019]Please refer to FIG. 2 that is a block diagram of a current-sense amplifier with low-offset adjustment according to an embodiment of the present invention. As shown, the current-sense amplifier with low-offset adjustment includes an equalizing unit 1, a bias compensation unit 2, and a sensing unit 3. The sensing unit 3 includes a sense amplifier 30, a latch circuit 31, a first precharged bit line 32, and a second precharged bit line 33. The first precharged bit line 32 is coupled to a cell current source IC and is electrically connected to the sense amplifier 30 to generate a first current In1. The second precharged bit line 33 is coupled to a reference current source IR and is electrically connected to t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A current-sense amplifier with low-offset adjustment and a low-offset adjustment method thereof are disclosed. The current-sense amplifier includes a sensing unit, an equalizing unit and a bias compensation unit. The sensing unit includes a sense amplifier, a latch circuit, a first precharged bit line, and a second precharged bit line. The equalizing unit is electrically connected to the first and the second precharged bit line for regulating a voltage of the first precharged bit line and a voltage of the second precharged bit line to the same electric potential. The bias compensation unit is electrically connected to the sense amplifier for compensating an input offset voltage of the current-sense amplifier.

Description

FIELD OF THE INVENTION[0001]The present invention relates to a current-sense amplifier, and more particularly to a current-sense amplifier with low-offset adjustment and a low-offset adjustment method thereof for compensating an input offset voltage of the current-sense amplifier and increasing the data read speed and accuracy of a flash memory.BACKGROUND OF THE INVENTION[0002]Non-volatile memory has been widely applied in memory cards and USB flash drives. Since consumers demand for memory having higher access speed and accuracy but lower power consumption, it has now become an important issue as how to develop a memory with increased data access speed and accuracy to satisfy the market demands. Presently, in most cases, electronic engineers try to obtain increased memory access speed and accuracy by reducing the offset voltage of a current-sense amplifier for the memory. The offset voltage would adversely affect the quality of a circuit system. In a current-sense amplifier for mem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C16/06
CPCG11C16/06G11C16/26G11C7/06
Inventor CHANG, MENG-FANLIN, YU-FANSHEN, SHIN-JANGCHIH, YU-DER
Owner NATIONAL TSING HUA UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products