Method for manufacturing a gate-control diode semiconductor device

Abstract

This invention belongs to semiconductor device manufacturing field and discloses a method for manufacturing a gate-control diode semiconductor device. When the gate voltage is relatively high, the channel under the gate has an n type and the device has a simple gate-control pn junction structure; by way of controlling the effective n-type concentration of the ZnO film through back-gate control, inverting the n-type ZnO into p-type through the gate and using NiO as a p-type semiconductor, an n-p-n-p doping structure is formed. The present invention features capacity of manufacturing gate-control diode devices able to reduce the chip power consumption through the advantages of a high driving current and small sub-threshold swing, is especially applicable to the manufacturing of reading & writing devices having flat panel displays & phase change memory, and semiconductor devices based on flexible substrates.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority to Chinese Patent Application No. CN 201210001675.9 filed on Jan. 5, 2012, the entire content of which is incorporated by reference herein.BACKGROUND OF THE INVENTION[0002]1. Technical Field[0003]The present invention belongs to the technical field of semiconductor device manufacturing, relates to a method for manufacturing a semiconductor device, and more especially, to a method for manufacturing a gate-control diode semiconductor device.[0004]2. Description of Related Art[0005]The Metal-Oxide -Semiconductor Field Effect Transistor (MOSFET) is a kind of field effect transistor capable of being widely used in the analog circuits and digital circuits, of which the basic structure is as shown in FIG. 1, including a silicon substrate 101, a gate insulation layer 104 and a gate conductive layer 105 formed on the silicon substrate 101, wherein a drain region 102 and a source region 103 are arranged on both sides...

AI Technical Summary

Benefits of technology

The present invention provides a method for manufacturing a gate-control diode semiconductor device that can reduce leakage current and SS value, thereby reducing chip power consumption. This method has the advantage of a simple process, low manufacturing cost, and can be used to manufacture flexible semiconductor devices with low power consumption, such as those used in displays and memory devices.

Problems solved by technology

Usually, both triodes can be magnified mutually, which may cause the increase of the device current and further cause the breakdown of the device in severe cases.

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