Cleaning liquid for lithography and method for forming wiring

Abstract

A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.

Description

RELATED APPLICATIONS[0001]This application claims the priority under 35 U.S.C. §119(a)-(d) to Japanese Patent Application No. 2012-132388, filed Jun. 11, 2012, the entire content of which is incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a cleaning liquid for lithography. More specifically, the invention relates to a cleaning liquid for lithography that can effectively clean and remove residue materials remaining after etching without corroding corrosion-prone materials such as low dielectric constant materials.[0004]The present invention further relates to a method for forming a wiring using the cleaning liquid for lithography.[0005]2. Related Art[0006]A semiconductor device laminates a metallic wiring layer, a low dielectric constant layer, an insulation layer, or the like on a substrate such as a silicon wafer, and the like. This type of semiconductor device is manufactured by processing each layer...

AI Technical Summary

Benefits of technology

The present invention is a cleaning liquid for lithography that can effectively remove residue materials after etching. The cleaning liquid has excellent corrosion-inhibiting effects on Low-k materials and can be used in a one-step process for forming wiring.

Problems solved by technology

In particular, a Low-k material having a dielectric constant (k) of 2.5 or less, which is called an ultra-Low-k (ULK) material, is very easily damaged by an alkali or an acid used as a cleaning liquid and tends to thereby readily cause changes in size, k value, contact angle, etc.

Such damage occurs not only in the cleaning step with a cleaning liquid but also in steps of CMP, etching, and ashing.

This can certainly inhibit damage of ULK materials, but reduces the ability of removing residue materials.

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