Cleaning liquid for lithography and method for forming wiring

Inactive Publication Date: 2013-12-12
TOKYO OHKA KOGYO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0017]According to the present invention, a cleaning liquid for lithography can be provided that shows an excellent corrosion-inhibiting effect on Low-k materials and has an excellent ability of removing r

Problems solved by technology

In particular, a Low-k material having a dielectric constant (k) of 2.5 or less, which is called an ultra-Low-k (ULK) material, is very easily damaged by an alkali or an acid used as a cleaning liquid and tends to thereby readily cause changes in size,

Method used

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  • Cleaning liquid for lithography and method for forming wiring
  • Cleaning liquid for lithography and method for forming wiring
  • Cleaning liquid for lithography and method for forming wiring

Examples

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examples

[0110]The present invention will be described in more detail by the following Examples, but is not limited to the Examples.

(Preparation of Cleaning Liquid for Lithography)

[0111]Cleaning liquids for lithography were prepared with the compositions and blending quantities shown in Table 1. Each reagent used was commercially available common reagent unless otherwise mentioned. The unit of the numbers shown in the table is % by mass unless otherwise mentioned.

(Evaluation of Etching Rate for Low Dielectric Constant Layer)

[0112]A film of a low dielectric constant material Aurora ULK (manufactured by ASM Japan K.K.) was formed on a silicon substrate to give a silicon substrate provided with a low dielectric constant layer with a thickness of 1500 Å. This silicon substrate was immersed in the cleaning liquid for lithography heated to 60° C. for 30 minutes. After completion of the immersion, the silicon substrate was rinsed with pure water, followed by measurement of the thickness of the low ...

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Abstract

A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.

Description

RELATED APPLICATIONS[0001]This application claims the priority under 35 U.S.C. §119(a)-(d) to Japanese Patent Application No. 2012-132388, filed Jun. 11, 2012, the entire content of which is incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a cleaning liquid for lithography. More specifically, the invention relates to a cleaning liquid for lithography that can effectively clean and remove residue materials remaining after etching without corroding corrosion-prone materials such as low dielectric constant materials.[0004]The present invention further relates to a method for forming a wiring using the cleaning liquid for lithography.[0005]2. Related Art[0006]A semiconductor device laminates a metallic wiring layer, a low dielectric constant layer, an insulation layer, or the like on a substrate such as a silicon wafer, and the like. This type of semiconductor device is manufactured by processing each layer...

Claims

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Application Information

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IPC IPC(8): G03F7/42H01L21/02
CPCG03F7/425H01L21/02068H01L21/02063G03F7/423C11D7/06C11D7/08C11D7/50G03F7/426H01L21/0273H01L21/311B08B3/08C11D7/263C11D7/3209C11D7/5009C11D7/5022H01L21/0206
Inventor KUMAGAI, TOMOYAETO, TAKAHIRO
Owner TOKYO OHKA KOGYO CO LTD
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