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Microcrystalline silicon thin film solar cell and the manufacturing method thereof

a microcrystalline silicon and solar cell technology, applied in the field of thin films, can solve the problems of device characteristic degradation and almost inevitable thin film deposition, and achieve the effect of effectively eliminating device characteristic degradation

Inactive Publication Date: 2014-04-17
INST NUCLEAR ENERGY RES ROCAEC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

The patent text describes a new method for producing high quality microcrystalline silicon thin film with high deposition rate without causing defects in the thin film deposition process. This method involves using multiple layers of microcrystalline silicon thin film formed in different chambers using different plasma sources. This results in improved quality of the microcrystalline silicon thin film and effective elimination of device characteristic degradation due to chamber contamination. The method does not increase manufacture cost.

Problems solved by technology

However, the device characteristic degradation due to chamber contamination and defected thin film deposition is almost inevitable in such high processing pressure and high plasma power manufacturing process.

Method used

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  • Microcrystalline silicon thin film solar cell and the manufacturing method thereof
  • Microcrystalline silicon thin film solar cell and the manufacturing method thereof
  • Microcrystalline silicon thin film solar cell and the manufacturing method thereof

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Embodiment Construction

[0016]For your esteemed members of reviewing committee to further understand and recognize the fulfilled functions and structural characteristics of the invention, several exemplary embodiments cooperating with detailed description are presented as the follows.

[0017]The present invention relates to a novel microcrystalline silicon thin film solar cell and the manufacturing method thereof, which is capable of effectively preventing chamber contamination during film deposition from happening in the high processing pressure and high plasma power PECVD process, and simultaneously enabling the multiple layers of microcrystalline silicon thin film respectively in different chambers using different plasma sources while allowing the crystallinity as well as the structure of a microcrystalline silicon thin film that is to be formed by the manufacturing method to be controlled and adjusted at will.

[0018]Please refer to FIG. 3, which is a flow chart showing the steps performed in a manufacturi...

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Abstract

The present invention relates to a microcrystalline silicon thin film solar cell and the manufacturing method thereof, using which not only the crystallinity of a microcrystalline silicon thin film that is to be formed by the manufacturing method can be controlled and adjusted at will and the defects in the microcrystalline silicon thin film can be fixed, but also the device characteristic degradation due to chamber contamination happening in the manufacturing process, such as plasma enhanced chemical vapor deposition (PECVD), can be eliminated effectively.

Description

FIELD OF THE INVENTION[0001]The present invention relates to a thin film and a method for manufacturing a thin film device, and more particularly, to a microcrystalline silicon thin film solar cell and the manufacturing method thereof.BACKGROUND OF THE INVENTION[0002]Global warming is the rise in the average temperature of Earth's atmosphere and oceans since the late 19th century that it is primarily caused by increasing concentrations of greenhouse gases produced by human activities such as the burning of fossil fuels and deforestation. Recently, warming of the climate system is unequivocal and has become perhaps the most complicated issue facing world leaders. Thus, there are more and more clean energy projects being proposed and developed, and among which, solar cells for converts light energy into electrical energy are most promising since the photovoltaic process will not releases any CO2, SO2, or NO2 gases which don't contribute to global warming. Moreover, Building-integrated...

Claims

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Application Information

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IPC IPC(8): H01L31/077H01L31/18
CPCH01L31/1804H01L31/077H01L31/03921H01L31/1816Y02E10/545Y02E10/547Y02P70/50H01L31/1824H01L31/1884
Inventor WANG, MIN-CHUANLIAO, TIAN- YOUHUANG, CHIH-PONGJAN, DER-JUN
Owner INST NUCLEAR ENERGY RES ROCAEC