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Surface treatment process for aluminum alloy and aluminum alloy article thereof

a surface treatment process and aluminum alloy technology, applied in the direction of superimposed coating process, cell components, coatings, etc., can solve the problem of uneven color of aluminum alloy

Inactive Publication Date: 2014-05-01
SHENZHEN FUTAIHONG PRECISION IND CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The current method of removing silicon from aluminum involves using acid, which can remove surface silicon but not all the silicon in the aluminum. The result is that a large amount of silicon in the inner part of the aluminum can transmit to the surface, causing uneven color. The invention aims to address this problem and improve the uniformity of color.

Problems solved by technology

However, the color of the aluminum alloy may not be uniform due to the silicon element contained in the aluminum alloy.
However, treating the aluminum alloy using acid can remove silicon element at / near the surface of the aluminum alloy, but not all the silicon element in the aluminum alloy.

Method used

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  • Surface treatment process for aluminum alloy and aluminum alloy article thereof
  • Surface treatment process for aluminum alloy and aluminum alloy article thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0023]In air drying the substrate 10: the substrate 10 was dried by a dryer (not shown) for 2 min.

[0024]In solution treating the substrate 10: the furnace had an inner temperature of about 525° C., the substrate 10 was positioned in the furnace to be solution treated for about 8 hours.

[0025]In quenching the substrate 10: the substrate 10 was dipped in water having a temperature of about 20° C. for 5 min.

[0026]In acid treating the substrate 10: the substrate 10 was dipped in the acid solution for 5 min The acid solution contained nitric acid and hydrofluoric acid in a volume ratio of 8:1. After the acid treatment, the total content of the silicon element contained in the substrate 10 decreased about 1.3%.

[0027]In polishing the substrate 10: the substrate 10 was dipped in a first polishing solution having a temperature of about 70° C. for 20 seconds. The first polishing solution contained sulfuric acid and phosphoric acid in a volume ratio of 1:3. Then the substrate 10 was dipped in a...

example 2

[0031]In air drying the substrate 10: the substrate 10 was dried by a dryer for 2 min.

[0032]In solution treating the substrate 10: the furnace had an inner temperature of about 510° C., the substrate 10 was positioned in the furnace to be solution treated for about 9 hours.

[0033]In quenching the substrate 10: the substrate 10 was dipped in water having a temperature of about 15° C. for 5 min.

[0034]In acid treating the substrate 10: the substrate 10 was dipped in the acid solution for 5 min The acid solution contained nitric acid and hydrofluoric acid in a volume ratio of 10:1.5. After the acid treatment, the total content of the silicon element contained in the substrate 10 decreased about 1.5%.

[0035]In polishing the substrate 10: the substrate 10 was dipped in a first polishing solution having a temperature of about 75° C. for 20 seconds. The first polishing solution contained sulfuric acid and phosphoric acid in a volume ratio of about 1:5. Then the substrate 10 was dipped in a se...

example 3

[0039]In air drying the substrate 10: the substrate 10 was dried by a dryer for 3 min.

[0040]In solution treating the substrate 10: the furnace had an inner temperature of about 495° C., the substrate 10 was positioned in the furnace to be solution treated for about 10 hours.

[0041]In quenching the substrate 10: the substrate 10 was dipped in water having a temperature of about 20° C. for 5 min.

[0042]In acid treating the substrate 10: the substrate 10 was dipped in the acid solution for 10 min The acid solution contained nitric acid and hydrofluoric acid in a volume ratio of 9:1. After the acid treatment, the total content of the silicon element contained in the substrate 10 decreased about 1.65%.

[0043]In polishing the substrate 10: the substrate 10 was dipped in a first polishing solution having a temperature of about 80° C. for 30 seconds. The first polishing solution contained sulfuric acid and phosphoric acid in a volume ratio of about 1:4. Then the substrate 10 was dipped in a se...

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Abstract

A surface treatment process for aluminum alloy includes the steps of: providing an aluminum alloy substrate containing silicon element; evenly distributing the silicon element in the substrate by solution treating the substrate; removing the silicon element at / near the surface of the substrate by acid treating the substrate; forming a porous aluminum oxide film on the substrate by anodizing the substrate; and staining the aluminum oxide film. An aluminum alloy article treated by the process is also described.

Description

BACKGROUND[0001]1. Technical Field[0002]The present disclosure relates to a surface treatment process for aluminum alloy and an aluminum alloy article treated by the process.[0003]2. Description of Related Art[0004]Aluminum alloys are widely used to manufacture housings of electronic devices. The aluminum alloys are usually anodized and stained to present colorful appearances. However, the color of the aluminum alloy may not be uniform due to the silicon element contained in the aluminum alloy. So, the silicon element is necessary to be removed from the aluminum alloy.[0005]The current method to remove the silicon element is to treat the aluminum alloy using acid. However, treating the aluminum alloy using acid can remove silicon element at / near the surface of the aluminum alloy, but not all the silicon element in the aluminum alloy. Commonly, the silicon element at / near the surface of the aluminum alloy has a lower density than that of in the inner of the aluminum alloy. As a resul...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C25D11/16C25D11/08C25D11/24
CPCC25D11/16C25D11/08C25D11/24C25D11/04C25D11/243C25D11/246
Inventor XIONG, CHENG-YANGZHOU, SHU-XIANGLIAO, KAI-RONG
Owner SHENZHEN FUTAIHONG PRECISION IND CO LTD
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