Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system

Abstract

Embodiments include systems and methods for producing semiconductor wafers having reduced quantities of point defects. These systems and methods include a tunable ultraviolet (UV) light source, which is controlled to produce a raster of a UV light beam across a surface of a semiconductor wafer during epitaxial growth to dissociate point defects in the semiconductor wafer. In various embodiments, the tunable UV light source is configured external to a Metal Organic Chemical Vapor Deposition (MOCVD) chamber and controlled such that the UV light beam is directed though a window defined in a wall of the MOCVD chamber.

Description

TECHNICAL FIELD[0001]Embodiments relate to processes or apparatuses specially adapted for the manufacture or treatment of semiconductor or solid-state devices or of parts thereof. More specifically, embodiments relate to using reduction or decomposition of a gaseous compound yielding a solid condensate (i.e., chemical vapor deposition or Metal Organic Chemical Vapor Deposition (MOCVD)), and bombardment of such structures with optical radiation during manufacture.BACKGROUND[0002]Chemical vapor deposition involves directing one or more gases containing chemical species onto a surface of a substrate so that the reactive species react and form a deposit on the surface. For example, compound semiconductors can be formed by epitaxial growth of a semiconductor material on a substrate. The substrate typically is a crystalline material in the form of a disc, commonly referred to as a “wafer.” Compound semiconductors such as III-V semiconductors commonly are formed by growing layers of the co...

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