34results about How to "Point defect" patented technology

An active matrix substrate includes a substrate, a TFT formed on the substrate, a storage capacitor element formed on the substrate, an interlayer insulating film covering the storage capacitor element, and a pixel electrode formed on the interlayer insulating film. The storage capacitor element includes a storage capacitor line, an insulating film formed on the storage capacitor line, and two or more storage capacitor electrodes opposed to the storage capacitor line with the insulating film interposed therebetween. The two or more storage capacitor electrodes are electrically connected via associated contact holes formed in the interlayer insulating film to the pixel electrode and electrically continuous with a drain electrode of the TFT.

A liquid crystal display device includes pixels having pixel electrodes and a common electrode. A liquid crystal material is held between the pixel electrodes and common electrode. Pixel switches are provided to supply video signals to the pixel electrodes. A plurality of memories are provided to store the video signals in a digital form supplied from the switches to the pixel electrodes. Connection controllers connect the memories to the pixel electrodes and periodically reverse polarities of the video signals output from the memories to the pixel electrodes with respect to potential of the common electrode. A potential setting terminal is provided and auxiliary capacitor lines connected to the potential setting terminal constitute capacitive coupling with the pixel electrodes. Separation circuits are provided to keep the auxiliary capacitor lines in an electrically floating state by electrically disconnecting the auxiliary capacitor lines from the potential setting terminal while the connection controllers connect the memories to the pixels.

A high-quality thin-film transistor array. The gate insulating film below the pixel electrode is etched off in its entirely or along a slit extending along a drain bus line in order to simultaneously remove the residual a-Si produced due to defective patterning. The insulating film is interposed between a drain bus line and a pixel electrode to form a boundary separating layer therebetween. The reject ratio is suppressed by reducing the occurrence of point defects of semi-bright spots, ascribable to capacitative coupling to the pixel electrodes as a result of interconnection of the residual a-Si produced by defective patterning to the drain bus line.

First memory chips each have a memory cell as storage means for storing data and do not have a redundant memory cell as redundant storage means for repairing an erroneous bit in the memory cell. Furthermore, a logic minimal in degree is solely provided for operation on a control logic of a second memory chip. The second memory chip has a control logic for effecting memory control of the memory cells, the redundant memory cells, etc. and a redundant memory cell for repairing an error bit of the first memory chips. The memory device is structured by stacking the first and second memory chips.

The present invention is a method for the manufature of a membrane structure for use in electrochemical conversions. The method includes providing a first mixture at a first temperature and a second mixture at a second temperature, extruding the first mixture to form a plurality of spaced-apart supportable membranes, cooling the extruded membrane from the first temperature to a third temperature, forming sufficient bubble surfaces of the second mixture between the membranes to facilitate the support of the membranes, cooling the extruded membranes and the formed bubble surfaces to a semi-solid from the second temperature to the third temperature less than the first and second temperatures, heating the cooled extruded membranes and the cooled formed bubble surfaces from the semi-solid at the third temperature to a predetermined elevated temperature sufficient to make the extruded membranes and the formed bubble surfaces into a sintered ceramic, and sufficiently cooling the extruded membranes and the formed bubble surfaces in the sintered ceramic to cause the bubbles to support the membranes.

There is provided a radiographic image conversion panel having a substrate made of a metal or an alloy, an oxide layer formed on the substrate by a vapor deposition technique such as sputtering, ion plating or ion beam assisted deposition, and a phosphor layer formed on the oxide layer by the vapor deposition technique. A method of manufacturing the radiographic image conversion panel is also provided. The radiographic image conversion panel is capable of suppressing for a long time corrosion of the surface of the substrate due to a reaction between a stimulable phosphor and the substrate through moisture and also capable of providing a radiographic image without any deterioration of the characteristics.

A system and process for making non-continuous articles with patterned microstructures. The articles are of high quality and may be used in flat panel display applications. The system and process use a casting roll with a pattern on the surface of the casting roll for patterning a non-continuous microstructure on a surface of the substrate, and a coating device that is adapted to apply a coating to the surface of the substrate in a non-continuous manner so that areas of the substrate that are coated by the coating device correspond to the casting roll pattern.

The method for producing an optical film includes a step of preparing a first coating liquid containing a certain amount of light-transmitting particles, a resin, and a solvent, a second coating liquid containing an amount less than the certain amount of light-transmitting particles, a resin, and a solvent, or not containing the light-transmitting particles but containing a resin and a solvent; a step of coating the second coating liquid and the first coating liquid in this order from the support side on a traveling band-shaped support in the form of a multilayer to form a second coating film and a first coating film; a step of transferring the light-transmitting particles in the first coating film to the side of the second coating film while drying the first coating film and the second coating film.

The manufacturing stability can be improved while effectively inhibiting the short-channel effect in the transistor according to the present invention. A halo impurity having a conductivity type opposite to a first conductivity type of a first impurity is ion-implanted into the silicon substrate 101, and thereafter, the first impurity having the first conductivity type is ion-implanted, and then a laser beam is irradiated on a region where the first impurity is doped under a condition so that the silicon substrate 101 is not melted to form a p-type halo region 113 and a n-type extension region 111. Then, the second impurity having the first conductivity type is ion-implanted into the silicon substrate 101, and a laser beam is irradiated on a region where the second impurity is doped under a condition so that the silicon substrate 101 is not melted to form a n-type source / drain region 109.

An active matrix substrate includes a substrate, a TFT formed on the substrate, a storage capacitor element formed on the substrate, an interlayer insulating film covering the storage capacitor element, and a pixel electrode formed on the interlayer insulating film. The storage capacitor element includes a storage capacitor line, an insulating film formed on the storage capacitor line, and two or more storage capacitor electrodes opposed to the storage capacitor line with the insulating film interposed therebetween. The two or more storage capacitor electrodes are electrically connected via associated contact holes formed in the interlayer insulating film to the pixel electrode and electrically continuous with a drain electrode of the TFT.

A method for fabricating a tunnel junction includes depositing a first electrode on a substrate, depositing a wetting layer having a thickness of less than 2 nm on the first electrode, using atomic layer deposition (ALD) to deposit an oxide layer on the wetting layer, and depositing a second electrode on the oxide layer. The wetting layer and the oxide layer form a tunnel barrier, and the second electrode includes a superconductor.

The present invention aims to provide a programmable logic device (PLD), and a related control program, capable of improving a product yield by avoiding a defect point according to defect point detected after PLD fabrication.The PLD includes a plurality of logical blocks including programmable logic circuits; storage in which both circuit information specifying path connecting the plurality of logical blocks using information specifying resources included in the path and defect point information specifying fault resource are stored in advance; replacement control section which refers to defect point information, decides whether fault resource is included in the path specified by circuit information, and when fault path is included, obtains replacement path, and rewrites circuit information with data identifying resources included in replacement path; and wiring resource section which reads out circuit information stored in storage, and forms a predetermined logic circuit based on readout circuit information.

A thin film transistor array substrate includes an insulating substrate; a thin film transistor arranged in a part of a pixel area on the insulating substrate; an auxiliary capacitor having an auxiliary capacitor electrode arranged in the pixel area and an opposite electrode facing the auxiliary capacitor electrode via an insulating layer, the opposite electrode being located in the same layer as source and drain electrodes of the thin film transistor; and a pixel electrode formed in the pixel area. The opposite electrode is divided into two or more sections, and each of the sections is electrically connected to the pixel electrode via a contact hole.

A radiation image storage panel is composed of a metal sheet and a phosphor layer formed on one surface of the metal sheet by gas phase-accumulation, in which the metal sheet has a surface having a surface roughness Ra of 0.1 μm or lower.

Embodiments include systems and methods for producing semiconductor wafers having reduced quantities of point defects. These systems and methods include a tunable ultraviolet (UV) light source, which is controlled to produce a raster of a UV light beam across a surface of a semiconductor wafer during epitaxial growth to dissociate point defects in the semiconductor wafer. In various embodiments, the tunable UV light source is configured external to a Metal Organic Chemical Vapor Deposition (MOCVD) chamber and controlled such that the UV light beam is directed though a window defined in a wall of the MOCVD chamber.

A method of manufacturing a liquid crystal panel in which the bright point defect is effectively corrected is provided. The method of manufacturing a liquid crystal panel 11 including a pair of substrates 40 and 30, and a liquid crystal layer 50 provided between the pair of the substrates 40 and 30 includes detecting a bright point defect in the liquid crystal panel 11; forming a first light blocking portion BL1 in one of the substrates 40 and 30 and in a part of an area that surrounds the bright point defect with a plan view; forming a recess in a portion of one of the substrates 40, 30 that overlaps the bright point defect and on a surface of the one of the substrates 40 and 30 that is opposite from a surface facing the liquid crystal layer; and forming a second light blocking portion BL2 in the recess.

A liquid crystal display device 10 of the present invention includes a liquid crystal panel 11 and a lighting device 12. The liquid crystal panel 11 has a liquid crystal layer 50 between a pair of glass substrates 31 and 41. The lighting device 12 supplies illumination light to the liquid crystal panel 11. The glass substrate 31 at least has a colored portion including a nonbridging oxygen hole center in an area that can block light to luminance defect area X that is a possible cause of a luminance point defect.

A polarizing film, comprising a polarizer; transparent protective films with a water-vapor permeability of 150 g / m2 / 24 hours or less provided on both sides of the polarizer; and adhesive layers each interposed between the polarizer and one of the transparent protective films, wherein the adhesive layers are formed by applying an active energy ray to an active energy ray-curable adhesive composition containing a radically polymerizable compound, and the transparent protective films are bonded to the polarizer with the adhesive layers.

A liquid crystal display device 10 in accordance with the present invention includes a liquid crystal panel 11 and a lighting device 12. The liquid crystal panel 11 has a liquid crystal layer 40 provided between a pair of glass substrates 21, 31. The lighting device supplies illumination light to the liquid crystal panel 11. At least a glass substrate 21, which is one of the pair of glass substrates 21, 31 has a photonic crystal 50 formed in a position capable of blocking light toward a luminance point defect occurrence portion X that is a cause of a luminance point defect. The photonic crystal 50 is capable of absorbing light having a color displayable in the luminance point defect occurrence portion X.

The method for producing an optical film includes a step of preparing a first coating liquid containing a certain amount of light-transmitting particles, a resin, and a solvent, a second coating liquid containing an amount less than the certain amount of light-transmitting particles, a resin, and a solvent, or not containing the light-transmitting particles but containing a resin and a solvent; a step of coating the second coating liquid and the first coating liquid in this order from the support side on a traveling band-shaped support in the form of a multilayer to form a second coating film and a first coating film; a step of transferring the light-transmitting particles in the first coating film to the side of the second coating film while drying the first coating film and the second coating film.

Embodiments include systems and methods for producing semiconductor wafers having reduced quantities of point defects. These systems and methods include a tunable ultraviolet (UV) light source, which is controlled to produce a raster of a UV light beam across a surface of a semiconductor wafer during epitaxial growth to dissociate point defects in the semiconductor wafer. In various embodiments, the tunable UV light source is configured external to a Metal Organic Chemical Vapor Deposition (MOCVD) chamber and controlled such that the UV light beam is directed though a window defined in a wall of the MOCVD chamber.

A liquid crystal display device 10 in accordance with the present invention includes a liquid crystal 11 and a lighting device 12, the liquid crystal panel 11 having a liquid crystal layer 50 provided between a pair of glass substrates 31, 41, the lighting device 12 supplying illumination light to the liquid crystal panel 11. The liquid crystal display device 10 is characterized in that a metal-halide containing region 60 is formed in a position in one of the pair of glass substrates 31, 41. The metal-halide containing region 60 contains a crystal of metal halide which exhibits photochromism in the light supplied from the lighting device 12. The position is capable of blocking light toward a luminance point defect occurrence portion X that becomes a cause of a luminance point defect. The one of the pair of glass substrates 31, 41 is disposed on the lighting device 12 side.

A contrast reduction preventive electrode is formed in a reflective region, and in the same layer as a transparent pixel electrode. A connection for connecting the contrast reduction preventive electrode and the transparent pixel electrode is formed, in such a position that the connection does not overlap an auxiliary capacitive wiring in plan view. When a short circuit is generated between the surfaces of the contrast reduction preventive electrode and an opposed electrode (not shown), the contrast reduction preventive electrode is cut off from the transparent pixel electrode at the connection.