Semi-insulating silicon carbide without vanadium domination

Abstract

A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 OMEGA-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.

Description

[0002] The term "microwaves" refers to electromagnetic energy in frequencies covering the range of about 0.1 gigahertz (GHz) to 1,000 GHz with corresponding wavelengths from about 300 centimeters to about 0.3 millimeters. Although "microwaves" are perhaps most widely associated by the layperson with cooking devices, those persons familiar with electronic devices recognize that the microwave frequencies are used for a large variety of electronic purposes and in corresponding electronic devices, including various communication devices, and the associated circuit elements and circuits that operate them. As is the case with many other semiconductor electronic devices and resulting circuits, the ability of a device (or circuit) to exhibit certain desired or necessary performance characteristics depends to a large extent, and often entirely, upon the material from which it is made. One appropriate candidate material for microwave devices is silicon carbide, which offers a primary advantag...

AI Technical Summary

Benefits of technology

[0013] Therefore, it is an object of the present invention to provide a semi-insulating silicon carbide substrate that offers the capabilities that are required and advantageous for high frequency operation, but while avoiding the disadvantages of prior materials and techniques.

[0015] In another aspect, the invention is a method of producing a semi-insulating bulk single crystal of silicon carbide. The method comprises heating a silicon carbide source powder to sublimation while heating and then maintaining a silicon carbide seed crystal to a temperature below the temperature of the source powder at which temperature sublimed species from the source powder will condense upon the seed crystal; and continuing to heat the silicon carbide source powder until a desired amount of single crystal bulk growth has occurred upon the seed crystal. The method is characterized in that the amounts of deep level trapping elements in the source powder are below detectable levels; and in that during sublimation growth, the source powder and the seed crystal are maintained at respective temperatures high enough to significantly reduce the amount of nitrogen that would otherwise be incorporated into the bulk growth on the seed crystal and to increase the number of point defects in the bulk growth to an amount that renders the resulting silicon carbide bulk single crystal semi-insulating.

[0034] In another embodiment, the invention comprises a method of producing a semi-insulating bulk single crystal of silicon carbide. In this embodiment, the method comprises heating a silicon carbide source powder to sublimation while, heating and then maintaining a silicon carbide seed crystal to a temperature below the temperature of the source powder, and at which temperature sublimed species from the source powder will condense upon the seed crystal. Thereafter, the method includes continuing to heat the silicon carbide source powder until a desired amount of single crystal bulk growth has occurred upon the seed crystal. The method is characterized in that (1) the amounts of deep level trapping elements in the source powder (as described above) are below the relevant amounts, (2) the source powder contains 5E16 or less nitrogen, and (3) during sublimation growth, the source powder and the seed crystal are maintained at respective temperatures high enough to significantly reduce the amount of nitrogen that would otherwise be incorporated into the bulk growth on the seed crystal and to increase the number of point defects (sometimes referred to as intrinsic point defects) in the bulk growth on the seed crystal to an amount that renders the resulting silicon carbide bulk single crystal semi-insulating. Preferably and conceptually, by keeping the amounts of nitrogen or other dopants as low as possible, the number of point defects required to make the crystal semi-insulating can also be minimized. Presently, the preferred number of point defects appears to be in the range of 1E15-5E17.

[0040] By avoiding the use of elements to create the deep level traps, the invention likewise eliminates the need to compensate the trapping elements with other elements and correspondingly reduces the complications that such compensation introduces into the crystal growth processes.

Problems solved by technology

As recognized by those familiar with microwave devices, they often require high resistivity ("semi-insulating") substrates for coupling purposes because conductive substrates tend to cause significant problems at microwave frequencies.

As those familiar with silicon carbide are aware, however, silicon carbide grown by most techniques is generally too conductive for these purposes.

In practice, however, SiC-based devices made using boron to obtain high resistivity have exhibited unexpectedly poor results at high power levels.

Additionally, in comparison to some other elements, boron tends to diffuse relatively well in SiC, giving it an undesirable tendency to migrate into adjacent device layers and unintentionally affect them.

First, the presence of electronically significant amounts of any dopant, including vanadium, can negatively affect the crystalline quality of the resulting material.

As a second disadvantage, the introduction of compensating amounts of vanadium can reduce the yield and add expense to the production of semi-insulating silicon carbide substrates.

Third, the proactive compensation of silicon carbide, or any other semiconductor element, can be somewhat complex and unpredictable and thus introduces manufacturing complexity that can be desirably avoided if the compensation can be avoided.

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