Metal Oxide Thin Film Semiconductor Device Monolithically Integrated With Dissimilar Device on the Same Wafer

Abstract

A monolithically integrated circuit comprising a semiconducting wafer, a metal oxide thin film semiconductor device disposed adjacent a first region of the semiconducting wafer, and a dissimilar semiconductor device disposed adjacent a second region of the semiconducting wafer and fabrication methods thereof.

Description

CROSS REFERENCE TO RELATED APPLICATION[0001]This application claims priority to co-pending U.S. Provisional Application Ser. No. 62 / 465,375 filed Mar. 1, 2017, entitled “Method of Monolithic Thin-Film Transistor Integration with Compound Semiconductors,” the entire contents of which is incorporated herein by reference.GOVERNMENT INTEREST[0002]The invention described herein may be manufactured and used by or for the Government of the United States for all governmental purposes without the payment of any royalty.FIELD OF THE INVENTION[0003]The present disclosure relates generally to integrated circuits. More particularly, the present disclosure relates to monolithic integration of metal oxide thin film semiconducting devices, such as metal oxide thin film transistors (MOTFTs), and dissimilar semiconductor devices, such as compound semiconductor transistors, on a single wafer and associated methods of fabrication of such monolithically integrated circuits.BACKGROUND OF THE INVENTION[00...

AI Technical Summary

Benefits of technology

The patent describes a method of making a monolithically integrated circuit on a semiconducting wafer. The method involves forming a metal oxide thin film semiconductor device and a dissimilar semiconductor device on different regions of the wafer. The metal oxide thin film semiconductor device is embedded in the semiconducting wafer and includes a metal oxide thin film semiconductor device gate. The dissimilar semiconductor device is a compound semiconductor transistor and includes a dissimilar semiconductor device gate and a dissimilar semiconductor device passivation layer. The method also includes forming electrically conducting interconnects between the metal oxide thin film semiconductor device and the dissimilar semiconductor device. The method can be carried out in a front end of line process or a back end of line process. The technical effects of this patent include improved performance and reliability of the integrated circuit and more efficient use of space on the semiconducting wafer.

Problems solved by technology

Regardless of whether these separately manufactured devices are packaged and then connected on a circuit board or connected more intimately as unpackaged dies, compromises in size, manufacturing complexity, and performance are made as compared to conventional IC technology where the devices are formed together in a single monolithically integrated circuit.

Although monolithic integration devices composed of dissimilar semiconductor material would expand circuit design flexibility and functionality while minimizing said compromises, thermodynamic constraints have prevented the simultaneous manufacture of devices formed from dissimilar semiconductor materials.

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