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Rare Earth Oxyfluoride Sintered Body And Method For Producing Same

a rare earth oxyfluoride and compact technology, applied in rare earth metal oxides/hydroxides, rare earth metal halides, yittrium oxides/hydroxides, etc., can solve the problems of low strength of sintered rare earth oxyfluoride compact, and affecting the production efficiency of rare earth oxyfluorid

Inactive Publication Date: 2020-12-31
MITSUI MINING & SMELTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent aims to strengthen rare earth oxyfluoride while keeping it anti-corrosive. The technical effect is to improve the strength of a sintered rare earth oxyfluoride compact.

Problems solved by technology

Components constructing the semiconductor fabrication apparatus are susceptible to corrosion by these corrosive gases or plasma, and particles shed from the surface of the components are liable to adhere to the surface of the semiconductor and cause product defects.
In this regard, however, a sintered rare earth oxyfluoride compact generally has low strength and can fracture during machining or is liable to chipping on its machined surface or edges.
Consequently, the sintered rare earth oxyfluoride compact has been difficult to machine with a view to increase the dimensional precision or reduce the surface roughness (mirror finishing).
From these standpoints, the sintered rare earth oxyfluoride compacts disclosed in JP 2000-239067A and JP 2016-98143A have insufficient strength and still leave room for improvement.

Method used

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  • Rare Earth Oxyfluoride Sintered Body And Method For Producing Same
  • Rare Earth Oxyfluoride Sintered Body And Method For Producing Same
  • Rare Earth Oxyfluoride Sintered Body And Method For Producing Same

Examples

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Effect test

example 1

[0062]Y2O3 powder and YF3 powder were mixed in a ratio of 49:51 by percentage to prepare a mixed powder. The mixed powder was put in a mold and formed into a green body by uniaxial pressing using a hydraulic press at a pressure of 65 MPa for 0.5 minutes. The resulting green body was fired in vacuo at 1400° C. for 4 hours to make a sintered compact.

example 2

[0063]Y2O3 powder and YF3 powder were mixed in a ratio of 51:49 by percentage to prepare a mixed powder. The mixed powder was mixed with water, a polycarboxylic acid dispersant, and an acrylic emulsion binder in a water, dispersant, and binder to mixed powder ratio of 20%, 1%, and 1%, respectively, relative to 10% of the mixed powder to prepare a slip. The slip was poured into a plaster mold for slip casting. The resulting green body was fired in vacuo at 1400° C. for 4 hours to obtain a sintered compact.

example 3

[0064]Y2O3 powder and YF3 powder were mixed in a ratio of 52:48 by percentage to prepare a mixed powder. The mixed powder was put in a graphite mold and hot pressed at a pressure of 20 MPa at 1300° C. for 1 hour to perform forming and firing simultaneously to make a sintered compact.

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Abstract

A sintered rare earth oxyfluoride compact is composed of LnaObFc (wherein Ln is a rare earth element; and a, b, and c each independently represent a positive number, provided that they are not equal to each other) or Ca-stabilized LnOF as a primary phase and LnOF unstabilized with Ca as a secondary phase. The intensity ratio of the XRD peak of the (018) or (110) plane of the unstabilized LnOF to the highest XRD peak of LnaObFc is preferably 0.5% to 30%.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a Divisional of U.S. application Ser. No. 16 / 461,436 filed May 16, 2019, which is a U.S. National Stage Application of International Application No. PCT / JP2017 / 040502, filed on Nov. 9, 2017, and claims priority to Japanese Patent Application No. 2016-246248, filed on Dec. 20, 2016. The entire disclosures of the above applications are expressly incorporated herein by reference.BACKGROUNDTechnical Field[0002]The present invention relates to a sintered compact of a rare earth oxyfluoride and a method for producing the same.Related Art[0003]A fluorine-containing or chlorine-containing corrosive gas and plasma based on such a gas are used in dry etching, plasma etching, and cleaning steps in the semiconductor fabrication. Components constructing the semiconductor fabrication apparatus are susceptible to corrosion by these corrosive gases or plasma, and particles shed from the surface of the components are liable to adhere t...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C04B35/50C04B35/553C04B35/645C01F17/218C01F17/259
CPCC04B2235/5436C04B35/50C04B2235/445C04B2235/6562C04B2235/77C04B35/645C04B2235/3225C04B35/553C04B35/505C04B35/6264C04B2235/85C04B2235/963C04B2235/96C04B2235/786C04B2235/785C04B2235/783C04B2235/3227C04B2235/3224C04B2235/762C04B2235/6027C01F17/259C01F17/218
Inventor KAJINO, HITOSHIIMAURA, SHOJI
Owner MITSUI MINING & SMELTING CO LTD
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