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Silicon carbide power device, driving circuit and control method

a technology of driving circuit and power device, which is applied in the direction of semiconductor devices, pulse techniques, electronic switching, etc., can solve the problems of bridge arm circuits being prone to crosstalk, narrower voltage tolerance range of silicon carbide power devices, and ineffectively solving the crosstalk phenomenon of silicon carbide power components

Active Publication Date: 2021-09-02
SHANGHAI HESTIA POWER INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach effectively suppresses the crosstalk phenomenon in silicon carbide semiconductor power elements by controlling the source voltage in response to gate-to-source voltage changes, thereby improving the performance and reliability of silicon carbide power devices.

Problems solved by technology

However, compared to traditional silicon power devices, the gate and source of silicon carbide power devices have a narrower voltage tolerance range and a lower ability to withstand negative voltages.
At high switching frequencies, the bridge arm circuit is prone to crosstalk.
At present, the crosstalk phenomenon of silicon carbide power components has not been effectively solved.

Method used

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  • Silicon carbide power device, driving circuit and control method
  • Silicon carbide power device, driving circuit and control method
  • Silicon carbide power device, driving circuit and control method

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Embodiment Construction

[0019]The detailed description and technical contents of the present invention are described below with reference to the drawings:

[0020]The invention provides a method for controlling a silicon carbide power device, which is applied to a driving circuit including a silicon carbide power device. The silicon carbide power device may be an insulated gate bipolar transistor (IGBT), a metal-oxide-semiconductor field-effect transistor (MOSFET), a junction gate field-effect transistor (JFET) or other power devices. The silicon carbide power device is controlled by a driver and has a gate-to-source voltage (Vgs) and a source voltage (Vs).

[0021]FIG. 1 is a schematic diagram of a circuit structure applied to a half-bridge circuit of an embodiment of the present invention. The silicon carbide power device is applied to the half-bridge circuit as an example. The half-bridge circuit comprises a controller 10, an upper bridge arm circuit 20 and a lower bridge arm circuit 30. The upper bridge arm ...

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PUM

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Abstract

A silicon carbide power device controlled by a driver and comprises a gate-to-source voltage and a source voltage, wherein the source voltage decreases according to an increase of the gate-to-source voltage, or the source voltage increases according to a decrease of the gate-to-source voltage. Thus, a spike caused by a change of the gate-to-source voltage is suppressed, thereby suppressing the crosstalk phenomenon of the silicon carbide power device.

Description

FIELD OF THE INVENTION[0001]The invention relates to a power device, a driving circuit and a control method, in particular to a silicon carbide power device, a driving circuit and a control method.BACKGROUND OF THE INVENTION[0002]Silicon carbide power devices have the advantages of high operating voltage, high operating temperature, low on-resistance, and high switching frequency. In particular, silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) and silicon carbide insulated gate bipolar transistor (SiC IGBT) are suitable for use in the recent demand for electric vehicles and 5G communications. The related technology is found in U.S. Pat. No. 9,018,640 B1, U.S. Pat. No. 9,373,713 B2, U.S. Pat. No. 10,020,368 B2, U.S. Pat. No. 10,483,389 B2, etc.[0003]However, compared to traditional silicon power devices, the gate and source of silicon carbide power devices have a narrower voltage tolerance range and a lower ability to withstand negative voltages. At high...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H03K17/16
CPCH03K17/162H01L29/1608
Inventor HSU, FU-JENHUNG, CHIEN-CHUNGCHU, KUO-TINGLEE, CHWAN-YING
Owner SHANGHAI HESTIA POWER INC