Semiconductor structure employing conductive paste on lead frame

Abstract

A semiconductor structure is provided. The semiconductor structure includes a base, a seed layer, a compound semiconductor layer, a gate structure, a source structure, a drain structure, and a conductive paste. The seed layer is disposed on the base. The compound semiconductor layer is disposed on the seed layer. The gate structure is disposed on the compound semiconductor layer. The source structure and the drain structure are disposed on both sides of the gate structure. In addition, the conductive paste is disposed between the base and a lead frame, and the conductive paste extends to the side surface of the base.

Description

BACKGROUND OF THE DISCLOSUREField of the Disclosure[0001]The present disclosure relates to a semiconductor structure, and in particular it relates to a semiconductor structure having a conductive paste on its side surface.Description of the Related Art[0002]Gallium nitride-based (GaN-based) semiconductor materials have many excellent material characteristics, such as high thermal resistance, wide band-gap, high electron saturation rate and so on. Therefore, gallium nitride-based semiconductor materials are suitable for high-speed and high-temperature operating environments. In recent years, gallium nitride-based semiconductor materials have been widely used in light-emitting diode (LED) elements and high-frequency elements, such as high electron mobility transistors (HEMTs) with heterogeneous interface structures.[0003]However, in the operation of a high-electron-mobility transistor (HEMT) device, many negatively charged impurities exist in the epitaxial layer located at the bottom ...

AI Technical Summary

Benefits of technology

The present patent provides a semiconductor structure that includes a base, a seed layer, a compound semiconductor layer, a gate structure, a source structure, a drain structure, and a conductive paste. The seed layer is located on the base, the compound semiconductor layer is located on the seed layer, the gate structure is located on the compound semiconductor layer, the source and drain structures are located on both sides of the gate structure, and the conductive paste is located between the base and a lead frame, and extends to the side surface of the base. The technical effect of this semiconductor structure is to provide a reliable and efficient connection between the base and the source, drain, and gate structures using a conductive paste, which results in improved performance and reliability of the semiconductor structure.

Problems solved by technology

However, in the operation of a high-electron-mobility transistor (HEMT) device, many negatively charged impurities exist in the epitaxial layer located at the bottom of the structure of the element due to the material characteristics of the epitaxial layer.

When a high voltage is applied, the negative charges will be attracted toward the upper layer of the element, which will affect the operation of the upper layer of the element.

Although the high-electron-mobility transistor devices manufactured using current manufacturing techniques have been adequate for their intended purposes, they have not been entirely satisfactory in all respects.

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