Array substrate and manufacturing method thereof
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first embodiment
[0042]Please refer to FIG. 1, which is a schematic diagram of an array substrate 100 of a first embodiment of the present disclosure. The array substrate 100 includes a flexible substrate 1, a plurality of thin film transistors (TFTs) 10, a plurality of replacement units 20, an organic filling layer 2, a source and drain layer 3, a planarization layer 4, an anode layer 5, and a pixel definition layer 6. The plurality of thin film transistors 10 and the plurality of replacement units 20 are disposed on the flexible substrate 1. The replacement units 20 and the thin film transistors 10 are spaced apart from each other. Specifically, the organic filling layer 2 is disposed on the flexible substrate 1. The organic filling layer 2 fills gaps between the thin film transistors 10 and the replacement units 20 and covers the thin film transistors 10 and the replacement units 20. The source and drain layer 3 is disposed on the organic filling layer 2. The planarization layer 4 is disposed on ...
second embodiment
[0049]Referring to FIG. 2, all the technical features in the first embodiment are included in the second embodiment, except that each of the thin film transistors 10 of the array substrate 100 in the second embodiment further includes a second insulating layer 16 and a second metal layer 17. Specifically, the second insulating layer 16 is disposed on the first metal layer 15. The second metal layer 17 is disposed on the second insulating layer 16. Material of the second insulating layer 16 includes SiNx. Material of the second metal layer 17 includes molybdenum (Mo).
[0050]The second insulating layer 16 has the same shape and size as the second metal layer 17, and has the same shape and size as the first insulating layer 14 and the first metal layer 15.
[0051]The second metal layer 17 serves as a layer of a capacitor plate in a driving circuit, and overlaps with the first metal layer 15 that drives the thin film transistors 10 to form a capacitor. The first metal layer 15 serves as a ...
third embodiment
[0052]Referring to FIG. 3, all the technical features in the second embodiment are included in the third embodiment, except that the organic filling layer 2 is composed of one layer in the second embodiment, and the organic filling layer 2 is composed of a plurality of layers in the third embodiment.
[0053]Referring to FIG. 3, in the third embodiment, the organic filling layer 2 includes a first organic layer 21 and a second organic layer 22 on the first organic layer 21. The first organic layer 21 completely covers the replacement units 20 and the thin film transistors 10. Alternatively, the first organic layer 21 completely covers the replacement units 20. More specifically, a laminated thickness of the thermal insulation layer 11, the buffer layer 12, the active layer 13, the first insulating layer 14, and the first metal layer 15 is less than or equal to a thickness of the first organic layer 21.
[0054]The thickness of the first organic layer 21 ranges from 1.5 um to 2.5 um, and a...
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