Data run programming

Abstract

Data in data runs are stored in a non-volatile memory array in adaptive metablocks that are configured according to the locations of data boundaries. A serial flash buffer is used to store some data, while other data are directly stored in non-volatile memory. Data may be stored with alignment to data boundaries during updating of the data to improve efficiency of subsequent updates.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application is a continuation-in-part of application Ser. No. 10 / 841,118, by Alan Welsh Sinclair, filed on May 7, 2004, which is a continuation-in-part of application Ser. No. 10 / 749,189, by Alan Welsh Sinclair, filed on Dec. 30, 2003, which applications are hereby incorporated by reference in their entirety.BACKGROUND.[0002]This invention relates generally to the operation of non-volatile memory systems, and, more specifically, to the handling of data within such memory systems.[0003]There are many commercially successful non-volatile memory products being used today, particularly in the form of small form factor cards, which employ an array of flash EEPROM (Electrically Erasable and Programmable Read Only Memory) cells formed on one or more integrated circuit chips. A memory controller, usually but not necessarily on a separate integrated circuit chip, interfaces with a host to which the card is removably connected and controls oper...

AI Technical Summary

Benefits of technology

The patent describes a method for storing data in a memory array in a way that reduces the impact of logical fragmentation and allows for efficient updating and copying of data. The method involves creating adaptive metablocks that can be tailored to the data being stored and can contain boundaries between data groups. These adaptive metablocks can be programmed in parallel, reducing the amount of data that needs to be copied. The method also includes using non-volatile random access memory (NVRAM) as a data buffer to hold data before it is programmed to flash memory. Overall, the method improves the performance and efficiency of storing data in flash memory arrays.

Problems solved by technology

These storage levels do shift as a result of charge disturbing programming, reading or erasing operations performed in neighboring or other related memory cells, pages or blocks.

Also, shifting charge levels can be restored back to the centers of their state ranges from time-to-time, before disturbing operations cause them to shift completely out of their defined ranges and thus cause erroneous data to be read.

Zones are primarily used to simplify address management such as logical to physical translation, resulting in smaller translation tables, less RAM memory needed to hold these tables, and faster access times to address the currently active region of memory, but because of their restrictive nature can result in less than optimum wear leveling.

Copying unchanged sectors may add to the time required for copying and adds to the space occupied by the data in the memory array because the original metablock may not be used until an erase operation is performed.

Thus, logical fragmentation becomes a greater problem as metablocks become larger.

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