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Methods and apparatus for adjusting beam parallelism in ion implanters

Inactive Publication Date: 2008-01-22
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0016]The ion optical element may comprise an angle corrector magnet for adjusting the ion beam for substantially parallel ion trajectories. The measuring system may c

Problems solved by technology

Parallelism may be achieved with an electrostatic lens, but energy contamination can be a drawback.
However, the angle corrector adjustment which achieves normal incidence on the wafer plane may result in less than optimum parallelism.
The lack of parallelism is unacceptable in highly critical applications.
However, beam parallelism and normal incidence are not maintained over a wide range of beam parameters, and changing the position of the end station is very difficult.

Method used

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  • Methods and apparatus for adjusting beam parallelism in ion implanters
  • Methods and apparatus for adjusting beam parallelism in ion implanters
  • Methods and apparatus for adjusting beam parallelism in ion implanters

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Embodiment Construction

[0026]A simplified block diagram of an example of an ion implanter suitable for incorporating the present invention is shown in FIG. 1. An ion beam generator 10 generates an ion beam of a desired species, accelerates ions in the ion beam to desired energies, performs mass / energy analysis of the ion beam to remove energy and mass contaminants and supplies an energetic ion beam 12 having low level of energy and mass contaminants. A scanning system 16, which includes a scanner 20 and an angle corrector 24, deflects the ion beam 12 to produce a scanned ion beam 30 having parallel or nearly parallel ion trajectories. An end station 32 includes a platen 36 that supports a semiconductor wafer 34 or other workpiece in the path of scanned ion beam 30 such that ions of the desired species are implanted into the semiconductor wafer 34. The ion implanter may include additional components well known to those skilled in the art. For example, the end station 32 typically includes automated wafer h...

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Abstract

Methods and apparatus for implanting ions in a workpiece, such as a semiconductor wafer, include generating an ion beam, measuring parallelism of the ion beam, adjusting the ion beam for a desired parallelism based on the measured parallelism, measuring a beam direction of the adjusted ion beam, orienting a workpiece at an implant angle referenced to the measured beam direction and performing an implant with the workpiece oriented at the implant angle referenced to the measured beam direction. The implant may be performed with a high degree of beam parallelism.

Description

FIELD OF THE INVENTION[0001]This invention relates to systems and methods for ion implantation of semiconductor wafers or other workpieces and, more particularly, to methods and apparatus for adjusting beam parallelism in ion implanters.BACKGROUND OF THE INVENTION[0002]Ion implantation is a standard technique for introducing conductivity-altering impurities into semiconductor wafers. A desired impurity material is ionized in an ion source, the ions are accelerated to form an ion beam of prescribed energy, and the ion beam is directed at the surface of the wafer. The energetic ions in the beam penetrate into the bulk of the semiconductor material and are embedded into the crystalline lattice of the semiconductor material to form a region of desired conductivity.[0003]Ion implantation systems usually include an ion source for converting a gas or a solid material into a well-defined ion beam. The ion beam is mass analyzed to eliminate undesired ion species, is accelerated to a desired ...

Claims

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Application Information

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IPC IPC(8): H01J37/08H01J37/147H01J37/317H01L21/265
CPCH01J37/1471H01J37/3171H01J37/147
Inventor OLSON, JOSEPH C.RENAU, ANTHONY
Owner VARIAN SEMICON EQUIP ASSOC INC