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Preparation method of AlN Si3N4-SiC ceramic material

A technology for ceramic materials and ceramic bodies, applied in the field of preparation of multiphase ceramic materials, can solve problems such as limited enhancement effect, and achieve the effects of reducing preparation cost, improving sintering performance, and improving interface morphology

Inactive Publication Date: 2008-04-16
NANJING UNIV OF SCI & TECH
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Problems solved by technology

Currently, Si 3 N 4 Ceramic materials combined with SiC are widely used in high-temperature materials and superhard high-strength materials, however, in this material, Si 3 N 4 There is an obvious interface morphology between the matrix and SiC particles, and the bonding mode of this interface limits the Si 3 N 4 Combined with the further improvement of the performance of SiC materials, the amount of SiC added is also limited. 3 N 4 Compared with the matrix material, the reinforcing effect of this material is very limited

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  • Preparation method of AlN Si3N4-SiC ceramic material
  • Preparation method of AlN Si3N4-SiC ceramic material
  • Preparation method of AlN Si3N4-SiC ceramic material

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Embodiment Construction

[0040] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0041] combine figure 1 , the present invention AlN-Si 3 N4 -The preparation method of SiC ceramic material, comprises the following steps:

[0042] 1.1 Prepare Al powder, Si powder and SiC particles in a mass ratio of 2:7:3 as raw materials.

[0043] 1.2 Add the prepared raw materials into absolute ethanol, ball mill in a ball milling tank, the absolute ethanol is submerged in the powder, seal the ball milling tank after the gas is drained, that is, refine and refine the powder by adding absolute ethanol ball milling Mixing, the ratio of material to ball is 1:3, and the ball milling time is 2 hours.

[0044] 1.3 Put the ball-milled powder in the air for a period of time after solid-liquid separation, and then put it into a drying oven for drying. The drying temperature is 80°C, not exceeding 80°C.

[0045] 1.4 Grinding and refining the dried powder.

[...

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Abstract

The present invention discloses a preparation method of AlN-Si3N4-SiC ceramic material. Said method includes the following steps: mixing Al powder, S; powder and SiC granules according to the mass ratio of 1-5:1-7:3-7 to prepare raw material; adding anhydrous ethanol into above-mentioned raw material, ball-grinding to obtain a powder material, standing still in air and making solid-liquid separation, drying at 60-80deg.C; grinding dried powder material, adding binding agent, stirring and granulating; press-forming the granulated mixed powder material; drying press-formed biscuit at 100-120deg.C; prenitriding dried biscuit, making the prenitrided biscuit undergo the processes of nitridation reaction and sintering treatment so as to obtain the AlN-Si3N4-SiC ceramic material.

Description

1. Technical field [0001] The invention relates to a preparation technology of a composite ceramic material, in particular to an AlN-Si 3 N 4 - Preparation method of SiC ceramic material. 2. Background technology [0002] Si 3 N 4 Both SiC and SiC are currently widely used ceramic materials. Si 3 N 4 As a kind of high-temperature structural ceramics, matrix composites have a series of excellent properties such as high temperature resistance, corrosion resistance, wear resistance, erosion resistance, and oxidation resistance, and can withstand harsh working environments that metal materials and organic polymer materials cannot withstand. However, Si 3 N 4 Ceramic materials are mainly covalent bonds. Even at high temperatures, the diffusion coefficient of atoms is still very low. Therefore, pure Si 3 N 4 Ceramic materials are difficult to prepare dense high-strength materials, and additives must be used to improve their structure and performance. SiC ceramics have e...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/565C04B35/622
Inventor 崔崇江金国刘金强王媛婷朱其枫张必昕
Owner NANJING UNIV OF SCI & TECH
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