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Ion injectivity optimizing method for photovoltaic infrared detector tellerium-cadmium-mercury materials

An infrared detector and ion implantation technology, applied in semiconductor/solid-state device testing/measurement, semiconductor devices, sustainable manufacturing/processing, etc., can solve problems such as time and effort, high test cost, and incomparability, and achieve Save time and effort, lower test costs, and improve comparability

Inactive Publication Date: 2008-07-09
HUAIYIN TEACHERS COLLEGE +1
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  • Claims
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Problems solved by technology

Obviously, this method has some disadvantages: (1) more MCT materials are needed to carry out the optimization test, and the material is expensive, so the test cost is high; (2) multiple tests with different ion doses need to be consumed A lot of time and energy; (3) Since the test is carried out on different substrate materials, it is inevitable that the comparability of the unit test results of different parameter series will be affected by the difference in the substrate material

Method used

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  • Ion injectivity optimizing method for photovoltaic infrared detector tellerium-cadmium-mercury materials
  • Ion injectivity optimizing method for photovoltaic infrared detector tellerium-cadmium-mercury materials
  • Ion injectivity optimizing method for photovoltaic infrared detector tellerium-cadmium-mercury materials

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Embodiment Construction

[0020] It is now described in conjunction with the accompanying drawings:

[0021] figure 1 It is the base material under test (MCT) sample, the sample is square, the surface layer of the base material of the sample is peeled off to expose a fresh mercury cadmium telluride layer 1, and then a layer of ZnS is evaporated as a barrier layer 2 for ion implantation, and in On the barrier layer, the implantation regions 3 of rows VIII and columns VIII, rows I-VIII in the horizontal direction and columns I-VIII in the vertical direction are regularly photoetched.

[0022] Such as figure 2 As shown in Figure A, the hollow area 5 carved out by the mask plate 4 is a horizontal rectangle and is located at the lower part of the mask plate, corresponding to figure 1 Rows V-VIII in the figure; Figure B shows that the hollow area 5 formed by the mask plate 4 is a vertical rectangle and is located on the right side of the mask plate, corresponding to figure 1 V-VIII columns in the figure;...

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Abstract

This invention provides a kind of improved method of tellurium -cadmium -mercury material ion injecting dosage of photovoltaic type infrared detector. It uses the same tellurium -cadmium -mercury membrane material developed from molecular beam epitaxial technique as base, which infects boron ion. The main process is: setting barrier layer, on which photo-etches infection region regularly. Making mask plates with gaps and superimposing them on the barrier layer respectively which Reveal the corresponding photoetching injection regions. Adjusting different ion dosage superposed formula and injecting to tellurium- cadmium -mercury base that is superimposed with mask plates and barrier layer. Finally, we can get p-n junction of serial elements. After measurement, we can get voltage-current characteristic curves of different elements and zero partial differential resistance value. After comparing, we can get the best ion infection dosage.

Description

technical field [0001] The invention relates to a research technology for preparing materials for infrared detectors, in particular to a method for optimizing ion implantation doses of mercury cadmium telluride materials for photovoltaic infrared detectors. Background technique [0002] Mercury cadmium telluride film material (Hg 1-x Cd x Te, MCT) has high absorption coefficient and high quantum efficiency because of its intrinsically excited transition between the valence band and the conduction band. In the ternary alloy system of MCT, different forbidden bands can be obtained by adjusting the cadmium component value, etc. And other advantages, and become an important material for the preparation of high-performance infrared detectors, especially widely used in photovoltaic infrared detectors with civilian and military value. The key to improving the detection performance of the MCT photovoltaic infrared detector is to prepare a high-performance p-n junction in the MCT m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/66
CPCY02P70/50
Inventor 陈贵宾陆卫全知觉王少伟李志锋
Owner HUAIYIN TEACHERS COLLEGE
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