Unlock instant, AI-driven research and patent intelligence for your innovation.

Efficient high-frequency amplifier and radio transmitter

A technology for high-frequency amplifiers and amplifying components, which is applied in the direction of high-frequency amplifiers, amplifiers, amplifier input/output impedance improvement, etc., can solve the problems of deterioration of amplification efficiency and large impedance changes, and achieve the purpose of suppressing the increase of circuit scale and preventing The effect of characteristic deterioration

Inactive Publication Date: 2008-10-01
MURATA MFG CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the impedance change amount is larger than the output impedance of the high-efficiency amplifier 101, so there is a problem that the characteristic of the amplification efficiency of the high-efficiency amplifier 101 is deteriorated.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Efficient high-frequency amplifier and radio transmitter
  • Efficient high-frequency amplifier and radio transmitter
  • Efficient high-frequency amplifier and radio transmitter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0055] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, the same code|symbol is attached|subjected to the same or equivalent part in a drawing, and the description is abbreviate|omitted.

[0056] FIG. 1 is a schematic block diagram for explaining the configuration of a radio transmission device 1000 for solving the problem of the conventional example shown in FIG. 15 .

[0057] Although not particularly limited, in the following description, it is assumed that the radio transmission device 1000 transmits a high-frequency signal in the microwave band or higher.

[0058] Referring to FIG. 1 , a radio transmission unit 1000 includes a high-frequency amplifier 101 , a low-impedance transmission line 102 for connecting the high-efficiency amplifier 101 and a nonreciprocal circuit element 103 , and a nonreciprocal circuit element 103 .

[0059] The high-efficiency amplifier 101 incorporated in the power amplifier modul...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A high-frequency amplifier in a power amplifier module includes, on a substrate on which the amplifier is formed, first- and second-stage amplifiers for receiving and amplifying an input signal, a harmonic processing circuit for matching of harmonics included in an output signal from the second-stage amplifier, and a low-pass filter receiving an output from the harmonic processing circuit to selectively pass a signal to be supplied to a non-reciprocal circuit element using a predetermined frequency as a cutoff frequency.

Description

technical field [0001] The present invention relates to a high-frequency semiconductor amplifier using a high-frequency transistor such as a field-effect transistor (hereinafter referred to as FET: FieldEffect Transistor) and a wireless transmission device using the high-frequency amplifier. A high-frequency amplifier used in communication equipment and a wireless transmitter using the high-frequency amplifier. Background technique [0002] A wireless transmission unit such as a portable terminal is configured by mounting a chip on which a high-frequency transistor such as FET is formed on a semiconductor substrate on an insulator substrate. [0003] FIG. 15 is a schematic block diagram illustrating the configuration of such a wireless transmission unit 9000 used in such a conventional portable terminal. [0004] In FIG. 15, a radio transmission unit 9000 includes a high-frequency amplifier (hereinafter referred to as "high-efficiency amplifier") 1010 capable of high-effici...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H04B1/02H03F3/193H03F3/60H01P1/203H03F3/189H03H7/01H04B1/04
CPCH03F1/56H03H7/0115H03F2200/387H01P1/2039H03F3/601H03F3/189
Inventor 太田彰井上晃
Owner MURATA MFG CO LTD