Method for mfg. nitrogen doped dielectric layer

Abstract

This invention provides method of preparing dielectric layer contains impurity nitrogen. One dielectric layer is formed on the semiconductor basement, then two steps azotizing technique are done to the dielectric layer, on to two levels annealing technique is done. The nitrogen distribution in the dielectric layer is uniform, so the layer has great electrical property.

Description

technical field [0001] The invention relates to a method for manufacturing a nitrogen-doped dielectric layer, in particular to a method for manufacturing a uniform nitrogen-doped gate oxide layer. Background technique [0002] In order to increase the integration level of a single chip, semiconductor elements are developing toward small and dense. In order to maintain high device performance requirements, the thickness of the gate oxide layer in the complementary metal oxide semiconductor (CMOS) device also needs to be reduced accordingly, so as to maintain a certain capacitance between the gate and the channel. Therefore, when the capacitance of the gate oxide layer is large, the electric field intensity in the gate oxide layer is low, thereby reducing the leakage current and improving the performance of the device. For example, in a semiconductor process below 130 nanometers (nm), it is even necessary to manufacture a thickness below 20 Angstroms ( ) gate oxide layer to...

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Problems solved by technology

[0007] The main purpose of the present invention is to provide a method for manufacturing a nitrogen-doped dielectric layer to solve the problems caused by the uneven distribution of nitrogen in the above-mentioned existing nitrogen-doped dielectric layer

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