Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Superfine grinding wheel for hard and crisp crystal substrate

An ultra-precision, crystalline technology, used in bonded grinding wheels, abrasives, semiconductor/solid-state device manufacturing, etc., can solve the problem of high cost, and achieve the effect of low grinding wheel cost, high grinding removal rate, and low grinding surface roughness

Active Publication Date: 2008-10-29
DALIAN UNIV OF TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to utilize existing fine-grained diamond grinding wheel to grind hard and brittle crystal substrate surface / subsurface damage and defect, and the problem such as high cost, thereby provides a kind of for hard and brittle crystal substrate grinding damage layer is small , low-cost grinding wheel, so that the hard and brittle crystal substrate has no scratches, pits, and micro-cracks, reducing the fragmentation of the grinding surface of the substrate and improving the quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Superfine grinding wheel for hard and crisp crystal substrate
  • Superfine grinding wheel for hard and crisp crystal substrate
  • Superfine grinding wheel for hard and crisp crystal substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] The specific implementation of the present invention will be described in detail in conjunction with the accompanying drawings. Configure the batching of 100g emery wheel grinding layer IV: take weight and be 40g cerium oxide abrasive, the particle diameter of abrasive grain is 3 μm; Take weight and be 20g sodium carbonate as pH regulator; Take weight and be that 10g sodium peroxide is as oxidant; Weigh 10g of talcum powder as a throwing aid; weigh 20g of phenolic resin as a binder; the PH value regulator in the grinding wheel filler 3 can provide an acidic or alkaline processing environment during the grinding process. Sodium carbonate. The oxidizing agent in the grinding wheel filler 3 can oxidize the surface of the crystal substrate during the grinding process to improve the material removal rate, and sodium peroxide is selected as the oxidizing agent. In the grinding process, in order to increase the polishing performance of the grinding wheel, reduce the friction ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a rigid crystal substrate ultra-fine grinding wheel. Wherein, it is formed by match ring, substrate ring, and grinding layer; the abrading layer of wheel is formed by abrasive, adhesive, stuff and air hole; the stuff is formed by pH adjuster, oxidant and furnish agent; the substrate ring is mounted on the match ring, via six uniform-distributed hexagonal bolts to be fixed, while they are made from aluminum alloy; the abrading layer is compressed or adhered on the substrate ring; the grinding wheel has high efficiency; the surface of product has low roughness; the inventive crystal substrate has no concave, no crack, etc. And the invention has low cost.

Description

technical field [0001] The invention belongs to the technical field of ultra-precision processing of hard and brittle crystal substrates, and relates to an ultra-precision grinding wheel for hard and brittle crystal substrates. Background technique [0002] With the rapid development of microelectronics and optoelectronics technology, the processing requirements for hard and brittle crystal substrates such as single crystal silicon, gallium arsenide, and sapphire are becoming more and more stringent. On the one hand, the processed substrates are required to have extremely high geometric precision such as parallelism and flatness; Micro-scratches, micro-defects, micro-cracks, dislocations and other defects and damage. [0003] At present, the processing technology of crystal substrate mainly includes lapping, grinding, chemical etching and chemical mechanical polishing (CMP). Generally, the surface roughness of the crystal substrate is relatively high (Ra0.1-0.2 μm) after g...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B24D5/00H01L21/304
Inventor 康仁科田业冰郭东明金洙吉高航
Owner DALIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products