chemical mechanical polishing composition

A chemical-mechanical and composition technology, applied in organic chemistry, other chemical processes, chemical instruments and methods, etc., can solve problems such as undisclosed and slowing down the etching rate of abrasive compositions

Active Publication Date: 2015-08-19
UWIZ TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this patent does not disclose that the use of a common inhibitor can slow down the etching rate of the abrasive composition for metal under the condition of maintaining a high grinding removal rate, and is suitable for both the first and second stages of copper metal grinding

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Listed according to Table 1, using the abrasive slurry composition control comprising silica sol abrasive grains, alanine, hydrogen peroxide, 1-H-benzotriazole, sodium cocoyl sarcosinate and solvent as water Samples are tested.

[0038]

[0039] Table 1

[0040] The grinding test was performed under the following conditions.

[0041] Grinding machine table: Mirra polisher (Applied Materials)

[0042] Wafer type: 8 o'clock Copper-clad thin film wafer (Ramco Co)

[0043] Grinding Downforce: 1.5psig and 0psig

[0044] Platform speed: 93rpm

[0045] Vehicle speed: 87rpm

[0046] Polishing pad: IC 1010 (Rodel Inc)

[0047] Slurry flow rate: 150ml / min.

[0048] The wafer uses a 4-point probe to measure the grinding rate, and the results are shown in Table 2:

[0049]

[0050] Table 2

[0051] Among them, the RR refers to the grinding removal rate (Removal Rate), WIWNU refers to the wafer surface uniformity (With-in-wafer-non-uniformity), and DER refers to the d...

Embodiment 2

[0054] Listed according to Table 3, using the abrasive slurry composition control comprising silica sol abrasive grains, alanine, hydrogen peroxide, 1-H-benzotriazole, sodium cocoyl sarcosinate and solvent as water Samples are tested.

[0055]

[0056] table 3

[0057] The grinding test was carried out according to the following conditions, and the results are recorded in Table 4.

[0058] Grinding machine table: Mirra polisher (Applied Materials)

[0059] Grinding Downforce: 3psig, 1.5psig and 0psig

[0060] Platform speed: 93rpm

[0061] Vehicle speed: 87rpm

[0062] Polishing pad: IC 1010 (Rodel Inc)

[0063] Slurry flow rate: 150ml / min.

[0064]

[0065]

[0066] Table 4

[0067] According to table 4 result, under fixed sarcosine concentration, grinding removal rate decreases along with the increase of benzotriazole concentration, can obtain a better composition (comparative example 6), has the high grinding removal rate of copper, and low etch rate, with ...

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Abstract

The invention relates to a chemical mechanical polishing composition, in particular to an inhibitor composition which at least contains an imidazoline compound or a triazole compound or a composition of the imidazoline compound and the triazole compound, sarcosine and a salt compound thereof or a composition of the sarcosine and the salt compound thereof. The inhibitor composition is applied to chemical mechanical polishing, can maintain the high polishing removal rate of a metal layer, has the characteristic of metal etching inhibition and can reduce the polishing defects of dish down, ablation, and the like.

Description

technical field [0001] The present invention relates to an inhibitor composition for chemical mechanical polishing, and aims to provide an inhibitor composition for chemical mechanical polishing, which can improve the planarization effect of the processed object. Background technique [0002] As the critical dimension (Critical Dimension) of electronic components becomes smaller and the number of wire layers increases rapidly, the resistance / capacitance time delay (RC Time Delay) will seriously affect the operation speed of the overall circuit. In order to improve the time delay and electromigration reliability problems caused by the narrowing of the metal connection line width, copper wire materials with low resistivity and high resistance to electromigration damage are selected to replace aluminum alloy metal. However, since copper metal is not easily etched, another damascene method must be used to form copper metal wires. [0003] The Damascene process is different from...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304C09K3/14C07D235/00C07D249/18C07C229/00
Inventor 张松源陆明辉何明彻
Owner UWIZ TECH
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