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GaAs-based quantum cascade semiconductor laser materials and growing method

A quantum cascade, gallium arsenide-based technology, applied in the semiconductor field, can solve the problems of deviation from design value, long growth time of material, and high growth rate of AlGaAs.

Inactive Publication Date: 2009-01-14
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

Such a thickness determines the long time for growing the material, and the composition ratio of Al and Ga in the actually prepared AlGaAs is easy to deviate from the design value
Moreover, since the active region is grown alternately by GaAs and AlGaAs, if the active region is grown according to the GaAs growth rate of the waveguide confinement layer and the cladding layer, the growth rate of AlGaAs in the active region is too high, resulting in poor quality of epitaxial materials

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  • GaAs-based quantum cascade semiconductor laser materials and growing method
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[0062] We mainly considered the following three aspects.

[0063] 1. Determination of Growth Rate

[0064] The growth rate is one of the conditions that determine the quality of the material. If the growth rate is too high, defects are likely to occur, and the quality of the material cannot be guaranteed; if the growth rate is too small, the material preparation time will become longer, which will easily cause the beam current value of each source furnace to drift, resulting in material composition that does not match the design. Since each layer in the active region is very thin, the growth time of each layer is short, and the opening and closing frequency of the source furnace is high, so during the growth process of the entire active region, the temperature of the source furnace should not be changed, and the beam current value cannot be adjusted accordingly. Change. In the process of growing the active region, the growth rates of AlGaAs and GaAs always satisfy a certain ...

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Abstract

This invention relates to gallium arsenide quantum semiconductor laser materials growing method, which comprises the following steps: a, using molecule beam extending technique to match down layer on the underlay; b, growing down wave guy limit layer on the down layer of transistor to improve wave guide chip layer reflection rate to strengthen limitation; c, growing source area on limit layer to strengthen light limit; d, growing wave guide limit layer on source area to improve light reflection limit; e, growing Ohm contact layer on limit layer to fulfill the invention materials growing.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium arsenide (GaAs)-based gallium arsenide / aluminum gallium arsenide (GaAs / AlGaAs) quantum cascade semiconductor laser material and growth method grown by solid source molecular beam epitaxy (SSMBE) technology. Background technique [0002] The invention of the quantum cascade laser in 1994 created a new milestone in the combination of "energy band engineering" design and high-precision molecular beam epitaxy material growth technology. Its working principle is to use the quantum tunneling of electrons to pass through the injection electrode composed of a group of superlattices under the condition of an external electric field, and reach the active region composed of another group of coupled quantum wells, and make a transition between the conduction band and the subband to emit light. , and become the injected electrons of the next-level similar structure, repeating...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/343H01S5/00
Inventor 李路刘峰奇刘俊岐郭瑜周华兵梁凌燕吕小晶
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI