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Method of improving the quality of defective semiconductor material

A semiconductor, defective technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems that have not yet been related to improving the quality of semiconductor crystal materials near the surface

Inactive Publication Date: 2009-06-24
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] So far there is no prior art dealing with improving the near-surface material quality of defective semiconductor crystalline materials such as SSOI substrates

Method used

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  • Method of improving the quality of defective semiconductor material
  • Method of improving the quality of defective semiconductor material
  • Method of improving the quality of defective semiconductor material

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Embodiment Construction

[0023] The present invention, described in more detail below with reference to the accompanying drawings, provides a method for improving the quality of defective semiconductor crystal materials. In the drawings, similar and / or corresponding elements are denoted by similar reference numerals.

[0024] First refer to figure 1 , showing one possible defective semiconductor crystal material 10 that can be used in the present invention. Specifically, figure 1 The defective semiconductor crystal material 10 shown is an SSOI substrate comprising a bottom semiconductor layer 12, an anti-Ge diffusion barrier 14, a (partially or fully) relaxed SiGe alloy layer 16, and (in a tensile manner) ) strained silicon layer 18.

[0025] Although the drawings and descriptions of the present invention depict defective semiconductor crystalline materials as SSOI heterostructures, the present invention is not limited to such defective semiconductor crystalline materials. Rather, other types of d...

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Abstract

A method is provided wherein a step of amorphization followed by a step of heat treatment is performed on defective semiconductor crystalline material. The amorphization step partially or completely amorphizes the region of the defective semiconductor crystalline material including the surface region. A heat treatment step is then performed in order to recrystallize the defective amorphized regions of the semiconductor crystalline material. In the present invention, recrystallization is achieved by solid-phase crystal regrowth from amorphized regions of defective semiconductor crystalline material.

Description

technical field [0001] The present invention relates to methods of fabricating semiconductor structures, and more particularly to methods of improving the quality of near-surface material of defective semiconductor crystals. Background technique [0002] Due to the improved charge carrier mobility in strained silicon-on-insulator (SSOI) substrates compared to unstrained silicon-on-insulator starting substrates (ie, SOI), in current semiconductor technology, on-insulator Strained silicon (SSOI) substrates are being considered for high performance complementary metal oxide semiconductor (CMOS) device technology. [0003] SiGe-on-insulator (SGOI) with low defect density is currently produced by one of two methods: 1) growing a relaxed silicon germanium (SiGe) alloy layer on a bulk silicon substrate, and combining the relaxed SiGe alloy with the The layer is transferred to an oxidized "handling" substrate; 2) a strained SiGe alloy layer is grown on the existing SOI substrate, f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/322H01L21/02H01L21/20H01L21/265H01L27/12
CPCY10S438/933H01L21/2022H01L21/02667H01L21/02461H01L21/02543H01L21/02488H01L21/02502H01L21/02463H01L21/02529H01L21/02524H01L21/02532H01L21/0245H01L21/02546H01L21/02447H01L21/02441H01L21/02538
Inventor 斯蒂芬·W·比戴尔基思·E·佛格尔谢里斯·纳拉斯赫姆哈
Owner GLOBALFOUNDRIES INC