Manufacture method of Schottky diode
A technology of Schottky diodes and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of difficulty in mastering the yield, high cost of nickel-platinum alloys, and inability to use process equipment, etc., to achieve production costs Effect of reduction and yield improvement
Inactive Publication Date: 2009-08-26
GRACE SEMICON MFG CORP
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[0003] The current method of mass production of Schottky diodes is to use nickel-platinum alloy as the metal layer, but the cost of nickel-platinum alloy is high and it is not a standard technology for general integrated circuit technology, so the existing process equipment cannot be used
However, most Schottky diode structures or manufacturing methods using cobalt (Cobalt) metal are only suitable for small-scale production due to ideal manufacturing conditions. If mass production is required, the yield rate is difficult to control. Therefore, no manufacturers have yet started to use cobalt. Production of Schottky diodes
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[0024] In order to mass-produce Schottky diodes with high yield, certain energy barrier height and low reverse leakage current, the present invention proposes a specific and feasible Schottky diode manufacturing method, which makes cobalt metal react with silicon substrate to form silicide Cobalt (CoSi) and cobalt disilicide (CoSi 2 ), and avoid the formation of cobalt disilicide with a crystal orientation of (311).
[0025] First, as shown in Figure 1(a), a silicon substrate 10 with a first surface 12 and a second surface 14 is provided. A heterogeneous silicon substrate with a crystal orientation of (100) was used as the base. Then as figure 2 As shown in (b), a material formed on the first surface 12 of the silicon substrate 10 is silicon dioxide (SiO 2 ) mask layer 16, and then use wet etching to remove part of the mask layer 16 to open the area 18 where the Schottky diode is to be formed, so that the silicon substrate 10 is exposed, as shown in Figure 1 (c), this step...
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The invention provides a manufacturing method for a schottky diode; wherein, a mask layer is formed on the first surface of a silicon substrate, part of the mask layer is removed by wet etching so as to open an area forming the schottky diode, a cobalt metal layer is deposited at the upper part and carries out heat treatment, a silicide metal layer is formed by reaction of the cobalt metal layer and the silicon substrate, and after the cobalt metal layer which is not reacted is removed, a metal layer is formed respectively on the silicide metal layer and the second surface of the silicon substrate as an electrode. The manufacturing method provided by the invention can be used for mass production of the schottky diode with high rate of finished products, and ensure that the schottky diode has a certain barrier height and lower leakage current.
Description
technical field [0001] The invention relates to a method for manufacturing Schottky diodes, in particular to a method capable of manufacturing Schottky diodes in large quantities. Background technique [0002] The structure of the Schottky diode includes a metal layer and an N-type silicon substrate doped with impurities. Since metals have no minority carriers, no charge storage, and almost no reverse recovery time, Schottky diodes can effectively overcome the shortcomings of general diodes that cannot quickly cut off the reverse cycle at high frequencies, and have the advantage of lower turn-on voltage , as a fast-switching diode in high-frequency and high-speed switching fast digital systems and microwave systems, providing high-frequency signal rectification. [0003] The current method of mass-producing Schottky diodes uses nickel-platinum alloy as the metal layer, but the cost of nickel-platinum alloy is high and it is not a standard technology for general integrated c...
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IPC IPC(8): H01L21/329
Inventor 马惠平刘宪周张有志孔蔚然周雪梅
Owner GRACE SEMICON MFG CORP