Diamond anvil for electrical quantity in-situ measurement and its production method
A diamond-to-anvil and in-situ measurement technology, which is applied to measuring devices, scientific instruments, and material analysis through electromagnetic means, can solve problems such as difficult temperature increase, large temperature gradient, and temperature loss, so as to prevent heat loss , measurement accuracy assurance, and the effect of improving the temperature environment
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Embodiment 1
[0028] Embodiment 1 Illustrates the overall structure of the present invention in conjunction with the accompanying drawings
[0029] The integral structure of a kind of diamond pair anvil of the present invention sees figure 1 and figure 2 .
[0030] figure 1 and figure 2 Among them, 1 is the alumina heat insulation layer, 2 is the sealing gasket, 3 is the sample chamber, 4 is the electrode, 5 is the electrode lead, there are four A, B, C, D, and 6 is the protective layer, which is made of alumina material. .
[0031] exist figure 1 Among them, two diamond anvils face opposite each other to form a diamond counter-anvil, and there is a sealing gasket 2 between the two diamond anvils, so that the space in the middle forms a sample cavity 3 . The upper diamond anvil is only deposited with an aluminum oxide heat insulating layer 1 on its anvil surface and side surfaces, the lower diamond anvil has four or two electrodes 4, and electrode leads 5 are welded at the ends of t...
Embodiment 2
[0035] Embodiment 2 of the present invention is used for the making of the diamond pair anvil of electrical quantity in situ measurement
[0036] Step 1: Soak two diamond anvils in a mixture of acetone and alcohol for 20 minutes to remove surface stains, and rinse with deionized water after taking them out.
[0037] Step 2: After drying, put the diamond anvil into the vacuum chamber, and use the magnetron sputtering method to deposit an aluminum oxide film on the surface of the two diamonds as a heat insulating material, that is, form an aluminum oxide heat insulating layer 1 . In order to increase the adhesion between the diamond and the film, the substrate is kept at 300 degrees Celsius during the sputtering process, and metal aluminum is used as the target material during the sputtering process, and oxygen and argon with a flow ratio of 30:2.4 are used as the working gas , the pressure in the vacuum chamber is always kept at 1Pa during the coating process.
[0038] The abo...
Embodiment 3
[0051] Example 3 An example of the thermal insulation effect of alumina—the difference between the presence and absence of the thermal insulation layer 1 of alumina.
[0052] The olivine sample was selected to test the thermal insulation performance of diamond on the anvil. The result is as image 3 and Figure 4 shown. image 3 is the radial temperature distribution of the sample chamber measured without any insulation, Figure 4 is the radial temperature distribution of the sample chamber when a 3-micron alumina insulation layer 1 is introduced. The maximum temperature difference in the temperature uniform area (the area marked by the horizontal line in the figure) is greater than 120 degrees without the alumina heat insulation layer, and the maximum temperature difference is less than 50 degrees with the alumina heat insulation layer 1, and the range of uniform temperature is from without alumina heat insulation ~45 microns in layers, increasing to ~60 microns. It can ...
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Abstract
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