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High-position grafting and leaning technology for balsam pear

A technology of balsam pear and high position, applied in the field of balsam pear high-position grafting, can solve the problems of plant death, balsam pear grafted seedlings are susceptible to diseases and insect pests, etc., and achieve the effects of long picking period, favorable mechanized operation, and reduced planting density.

Inactive Publication Date: 2009-10-28
双流县永安苦瓜协会
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to provide a new high-position grafting technology of bitter gourd to solve the problems in the prior art that the grafted parts of bitter gourd grafted seedlings are easily infected with diseases and insect pests, and are easy to cause plant death.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The present embodiment balsam pear high-ranking technology mainly comprises the following steps:

[0026] (1) Seedling cultivation: When the daytime temperature in spring reaches 18-20°C and the nighttime temperature reaches 12-15°C, the Taiwan hybrid bitter gourd seeds are sown, and when the bitter gourd seedlings (seedlings) have true leaves, they are transplanted to the field. It is advisable to plant about 100 plants; at the same time, 1-3 loofah seeds are sown at 0.5-0.8m near each bitter gourd seedling;

[0027] (2) High-level grafting: when the loofah seedlings grow to about 1m, and the bitter gourd seedlings grow to about 1-1.5m, the stems of the loofah seedlings and the bitter gourd seedlings are about 25-30cm away from the ground and the stem diameter is about 0.4-0.5cm. When it is about 30-50 cm above the ground, cut off the loofah seedlings (remove the upper part), and cut the loofah seedlings at about 0.8-1.0 cm from the cross section, and cut them into ton...

Embodiment 2

[0031] The present embodiment balsam pear high-ranking technology mainly comprises the following steps:

[0032] (1) Cultivation of seedlings: When the daytime temperature in spring reaches 18-20°C, and the nighttime temperature reaches 12-15°C, the grafted seedlings of bitter gourd are selected, that is, common grafting technology is adopted, and the long green loofah is used as the rootstock, and the large white balsam pear is used as the scion. About 3cm from the ground, the balsam pear seedlings are grafted onto the loofah stems, and the obtained grafting parts are the loofah stems and root systems, and the above grafting parts are the balsam pear grafted seedlings; When the true leaves are transplanted to the field, it is advisable to plant about 800 plants per mu; at the same time, at least 1 long-green loofah seed is sown at 0.8-1.0m near each bitter gourd seedling, or directly transplant the plant height and the bitter gourd seedling At least one loofah seedling that i...

Embodiment 3

[0037] The present embodiment balsam pear high-ranking technology mainly comprises the following steps:

[0038] (1) Cultivation of seedlings: When the daytime temperature in spring reaches 18-20°C and the nighttime temperature reaches 12-15°C, the grafted seedlings of bitter gourd are selected and bred, that is, common grafting technology is adopted, and the short and thick loofah is used as the rootstock, and the No. 3 king bitter gourd is used as the rootstock. Scion, at about 6cm of the loofah seedlings off the ground, graft the balsam pear seedlings on the loofah stems, the obtained grafting site is the loofah stem and the root system, and above the grafting site is the balsam pear grafted seedlings of the balsam pear seedlings; after the balsam pear grafted seedlings survive, grow When 4-6 true leaves emerge, transplant to the field, and it is advisable to plant about 800 plants per mu; at the same time, sow at least 1 short and thick loofah seed at 0.8-1.0m near each bit...

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PUM

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Abstract

The invention discloses a bitter gourd high-level grafting technology, which mainly includes the steps of seedling cultivation, high-level grafting, post-marriage management, etc., at a distance of about 30-50 cm from the ground, the loofah seedlings are grafted onto the bitter gourd seedlings, so that a plant Bitter gourd vine has two root systems to provide nutrition at the same time. Bitter gourd seedlings adopting this high-level grafting technology have enhanced disease resistance, humidity resistance, drought resistance, and the mortality rate can be reduced to zero; because the two roots supply nutrients at the same time, the plants grow rapidly, grow well, bear fruit early, and have a long picking period. Compared with the existing technology, the yield of grafted bitter gourd seedlings can be increased by 10-20%, and the yield of ordinary bitter gourd seedlings can be increased by more than 40%. In addition, the high-position grafting technology can greatly reduce the planting density of bitter gourd and reduce labor, which is conducive to mechanized operation. The production cost can be reduced and the economic benefit can be improved.

Description

technical field [0001] The invention relates to a high-position grafting technology of bitter gourd, and belongs to the technical field of vegetable grafting. Background technique [0002] Bitter gourd is an annual herb of the Cucurbitaceae family. Bitter gourd has the effect of clearing the liver and improving eyesight, increasing appetite, and it can also help digestion. It is a popular health vegetable in summer. [0003] But the following main problems often exist in the existing bitter gourd cultivation technology: [0004] (1) After years of continuous planting of bitter gourd, the damage of soil pests and diseases has increased, resulting in reduced production or even no harvest; [0005] (2) Seedlings transplanted by direct seeding are susceptible to fusarium wilt, have weak stress resistance, and have low yield and output value; [0006] (3) The planting density is relatively high, generally 2000-2500 plants per mu or even more. The harvest time is short and the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): A01G1/00A01G1/06
Inventor 游鹏飞
Owner 双流县永安苦瓜协会