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Ultra-high frequency low noise amplifier

A low-noise amplifier and ultra-high-frequency technology, which is applied to high-frequency amplifiers, improved amplifiers to reduce noise effects, and amplifiers with distributed constants in the coupling network. It can solve problems such as high cost, difficult design, and inferior performance. To achieve the effect of performance improvement

Inactive Publication Date: 2009-11-04
上海杰盛无线通讯设备有限公司
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Monolithic Microwave Integrated Circuit (MMIC) is relatively easy, but the cost is high, and its performance is not as good as the latter; for High Electron Mobility Field Effect Transistor (HEMT), there are two design difficulties, namely stability and taking into account noise matching and power match

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Embodiment Construction

[0025] Please refer to the accompanying drawings for a further description of the present invention.

[0026] like figure 1As shown in the circuit principle block diagram of the present invention, the present invention takes the 13GHz frequency band as an example. The parameters of the ultra-high frequency low-noise amplifier and its matching circuit and power supply circuit are as follows: FHX13LG low-noise 20-amplifier tubes U101, U102, U190 of Eunyda Company are used. It consists of a three-stage cascaded form, and is provided with an input matching circuit and a power supply input module 1, a first to second stage interstage matching circuit and a power supply input module 2, a second to third stage interstage matching circuit and a power supply input module 3, output matching Circuit and Power Input Module 4.

[0027] like figure 2 As shown in the principle block diagram of the input matching circuit of the present invention, the input matching circuit of the present i...

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Abstract

The UHF low-noise amplifier based on Eunyda's FHX13LG comprises: an input matching circuit, the matching circuit between the first and second stage, the matching circuit between the second and third stage, an output matching circuit, and the input module for every stage. This invention optimizes specially in 12.7-13.25GHz, reduces cost half of single microwave IC, and improves performance. The testing results show: product gain 24dB, adding 6dB output attenuation, strip fluctuation 1dB, input return loss over 12dB, NF 1.6-1.8dB, and unconditional stable in full frequency band.

Description

technical field [0001] The invention relates to a low-noise amplifier, in particular to an ultra-high-frequency low-noise amplifier applied to transceivers of microwave quasi-synchronous digital series / synchronous digital series (PDH / SDH) outdoor units of 12.7GHz to 13.25GHz. Background technique [0002] It is applied to the transceiver of microwave quasi-synchronous digital series / synchronous digital series (PDH / SDH) outdoor unit of 12.7GHz~13.25GHz. The noise performance of the receiver directly affects the sensitivity of the receiver, and the noise of the receiver is mainly caused by the input The noise and gain of the low-noise amplifier at the end are determined. The low-noise amplifier in this band can be realized by using a monolithic microwave integrated circuit (MMIC) or a high electron mobility field effect transistor (HEMT) with a special matching circuit. Monolithic Microwave Integrated Circuit (MMIC) is relatively easy, but the cost is high, and its performanc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/60H03F3/189H03F1/26H04B1/04H04B1/16
Inventor 邱健陈松麟张云烽张勇
Owner 上海杰盛无线通讯设备有限公司