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Partial vacuum packaging method for resonant mode pressure sensor chip

A pressure sensor and partial vacuum technology, applied in the direction of instruments, microstructure devices, processing microstructure devices, etc., can solve the problems of local temperature rise, influence of vacuum degree, and less gas molecules in the vacuum chamber, so as to reduce the fracture of movable parts , Improve the yield, improve the effect of adhesion

Inactive Publication Date: 2009-11-18
NO 24 RES INST OF CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method has two defects: 1) Due to the large overall package cavity, a large number of adsorbed gas molecules will be released on the metal inner wall of the vacuum cavity, which will affect the vacuum degree; 2) Since the bottom of the chip is glass, the heat transfer of glass The efficiency is very low, the gas molecules in the vacuum chamber are less, and the heat cannot be transferred to the outside of the shell through the thermal molecules to achieve heat balance, resulting in a very severe local temperature rise, and even causing the thermal excitation resistors and matching resistors on the chip to burn out
This method has two disadvantages: 1) The lead-tin eutectic sintering method is not environmentally friendly and is being banned by the country; 2) It is difficult to process a ring on the chip, and it is difficult to form a vacuum in the vibration beam area of ​​the resonant pressure sensor chip microcavity

Method used

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  • Partial vacuum packaging method for resonant mode pressure sensor chip
  • Partial vacuum packaging method for resonant mode pressure sensor chip
  • Partial vacuum packaging method for resonant mode pressure sensor chip

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Embodiment Construction

[0045] Specific embodiments of the present invention are not limited to the following description. The method of the present invention will be further described below in conjunction with the accompanying drawings.

[0046]1. Prepare a TiW / Au ring 3 with a thickness of 10-20 μm and a ring width of 100-200 μm on the sensor silicon wafer 5 to be subjected to deep groove etching on the back side and release movable parts on the front side, and perform deep groove etching and release of movable parts. The steps in part 6 include:

[0047] (1) The silicon chip 5 of the sensor to be subjected to deep groove etching on the back and release of the movable parts on the front figure 1 as shown, figure 1 1 in the figure indicates that silicon is prepared to be etched on both sides of the sensor resonant beam to release the area where the resonant beam is formed, and 2 indicates the area on the back of the sensor chip where a deep groove is prepared to etch silicon. Clean the sensor sil...

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Abstract

The invention relates to a partial vacuum packaging method for a resonant pressure sensor chip. In this method, a titanium-tungsten / gold ring with a thickness of 10-20 μm and a ring width of 100-200 μm is formed in the desired partial vacuum packaging area, and deep groove etching and release of movable parts are carried out at the same time, using the reflow of metal in eutectic sintering To adjust the unevenness of the surface, ensure the realization of partial vacuum packaging, greatly improve the yield of partial vacuum packaging, and form a whole set of manufacturing methods for the preparation of movable parts and rings. The method is applicable to the field of partial vacuum encapsulation of movable parts of microelectromechanical systems (MEMS).

Description

(1) Technical field [0001] The invention relates to a method for vacuum packaging partial parts of MEMS on a microelectromechanical system (MEMS) chip, in particular to a partial vacuum packaging method for a resonant pressure sensor chip, which is applied in the field of MEMS packaging. (2) Background technology [0002] At present, in the vacuum packaging technology of resonant pressure sensors, the main methods of vacuum packaging are: [0003] 1. Overall vacuum packaging technology. First, silicon glass bonding is performed on the chip and glass, and then a layer of titanium-platinum gold (TiPtAu) is sputtered, and airtight eutectic sintering is carried out with the metal shell; then, wire bonding and parallel sealing welding are carried out; finally, by laser The sealing and welding machine vacuum-packages the entire chip. This method has two defects: 1) Due to the large overall package cavity, a large number of adsorbed gas molecules will be released on the metal inn...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C3/00
Inventor 张正元刘玉奎罗驰胡明雨冯志成郑纯刘建华
Owner NO 24 RES INST OF CETC