Programming and erasing method for non-volatile memory

Abstract

The present invention provides a high-speed low-voltage programming scheme and self-convergent high-speed low-voltage erasing schemes for Electrically Erasable Programmable Read-Only Memories. For the N-type Field Effect Transistor based NVM programming, an elevated source voltage to the substrate can achieve high efficient Drain-Avalanche-Hot-Electron Injection into the floating gate resulting in high-speed and low-voltage operations. The self-convergent and low-voltage erasing can be achieved by applying Drain-Avalanche-Hot Hole Injection with the conditions of restricted maximum drain current and a moderate control gate voltage enough to turn on the NFET. For the p-type FET based EEPROM programming, a negative source voltage relative to the substrate can achieve high efficient Drain-Avalanche-Hot-Hole Injection into the floating gate resulting in high-speed and low voltage operations. The self-convergent and low voltage erasing can be achieved by applying Drain-Avalanche-Hot-Electron Injection with the conditions of restricted maximum magnitude of drain current and a negative moderate control gate voltage enough to turn on the PFET.

Description

technical field [0001] The present invention relates to a non-volatile memory (NVM), in particular to a non-volatile memory programming (programming) and erasing method, in order to achieve high-speed low-voltage programming operation and self-convergent (self-convergent) high-speed low-voltage Erase operation. Background technique [0002] The data storage mechanism of non-volatile memory depends on the ability to hold electric charge for a long time. Charge is stored in the polysilicon floating gate of the metal oxide semiconductor (MOS) device. Charge is transferred from the silicon substrate through the insulator to the floating gate. [0003] Semiconductor nonvolatile memory, especially electrically erasable nonvolatile memory, is widely used in electronic devices or equipment in various fields, from computers to telecommunications equipment, consumer equipment, and subscriber identification (SIM) on mobile phones Card. The EEP non-volatile memory is usually used as...

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Problems solved by technology

However, this method requires not only a large silicon area but also a long time-consuming operation procedure for converging circuits

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