Lighting apparatus, exposure apparatus and micro device manufacturing method

Abstract

A lighting apparatus illuminates a plane (M) to be illuminated, with illuminating light projected from a light source (5). The lighting apparatus is provided with an entrance side reflection type fly's eye optical system (12) configured by arranging a plurality of reflection type partial optical systems in parallel; an outgoing side reflection type fly's eye optical system (14) configured by arranging a plurality of reflection type partial optical systems corresponding to each of the plurality of reflection type partial optical systems configuring the entrance side reflection type fly's eye optical system (12); and capacitor optical systems (18, 20) including two reflecting mirrors for guiding the illuminating light reflected by the outgoing side reflection type fly's eye optical system (14) to the plane (M). At least one of curvature centers of the two reflecting mirrors is optically decentered from a normal line at the center of a lighting area on the plane (M).

Description

technical field [0001] The present invention relates to an illumination device for manufacturing micro-elements such as semiconductor elements, liquid crystal display elements, and thin-film magnetic heads through photolithographic etching process, an exposure device equipped with the illumination device, and a micro-element using the exposure device manufacturing method. Background technique [0002] In recent years, the practical technology of projection exposure equipment, which uses extreme ultraviolet (EUV, extreme ultraviolet) light in the wavelength range of about 5 to 40 nm as exposure light and projects a mask pattern onto a photosensitive substrate, has been progressing. . In the EUVL (extreme ultraviolet light lithography) exposure device, because the glass material with higher transmittance to short-wavelength light is limited, so a reflective optical system is used (refer to, for example, U.S. Patent No. 6,452,661 specification and Japanese Patent Early public...

AI Technical Summary

Problems solved by technology

However, the wafer 214 will move in the scanning direction during exposure, so when the condenser optical system 211 is arranged below the position of the wafer 214, the condenser optical system 211 and the wafer 214 will interfere with each other.

Therefore, in the exposure apparatus disclosed in the prior art, it is difficult to increase the reflectivity of EUV light, increase the focal length of the condenser optical system 211, and enlarge the distance between the incident-side fly mirror surface 207 and the exit-side fly mirror surface 208, In this way, the EUV light is incident at an angle close to the reflection surface of the incident-side fly mirror surface 207

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