Hough transform based CZ monocrystal silicon bar diameter measuring method
A technology of Czochralski single crystal and Hough transform, applied in single crystal growth, chemical instruments and methods, self-melting liquid pulling method, etc. It can reduce the amount of calculation, improve the accuracy, and improve the robustness of the algorithm.
Active Publication Date: 2007-08-01
XIAN ESWIN MATERIAL TECH CO LTD +1
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[0004] 1. The image acquisition method using "zoom lens" or "dual CCD system" is complex and costly
[0005] 2. Since the aperture image during crystal growth is a distorted and incomplete ring, in order to achieve reliable detection, traditional image processing methods require the lowest point of the arc in the image as the positioning reference. This requirement applies to the observation window and diversion barrel of the single crystal furnace The design brings a lo
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[0070] In the example shown in FIG. 5, after clustering, a=496 (pixels), r=1080 (pixels), ratio coefficient k=0.278, and the measured crystal diameter is 300.24mm.
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Abstract
The invention relates to a hough transformation- base method for measuring the diameter of vertical pulling single crystal silicon bar. It comprises following steps: collecting image during crystal growth, pretreating image, checking crystal growth information with Hough transforamtion and getting diameter, X coordinate for circle center and Y coordinate for circle center, average value clustering for space curve crossing point and getting accurate diameter measuring value. The invention employs one pick-up head and measures diameter for seeding and constant diameter process, the measuring accuracy is high and speed is fast.
Description
technical field [0001] The invention belongs to the technical field of photoelectric detection, and relates to a method for measuring the diameter of a silicon rod when the Czochralski method is used to produce single crystal silicon, in particular to an image measuring method for the diameter of a silicon rod with Hough transform as the core. Background technique [0002] As the main basic material of the semiconductor industry, silicon single crystal has played a pivotal role in the development of the semiconductor industry. At present, the Czochralski method is the main method for manufacturing single crystal silicon. In the process of manufacturing single crystal silicon by the Czochralski method, it is the basic requirement to ensure the growth of crystals with equal diameters. Therefore, accurate detection and automatic control of crystal diameters are key technologies to ensure crystal quality and yield. With the development trend of silicon wafer manufacturing to lar...
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IPC IPC(8): C30B15/26
Inventor 刘丁赵跃季瑞瑞任海鹏
Owner XIAN ESWIN MATERIAL TECH CO LTD
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