Hough transform based CZ monocrystal silicon bar diameter measuring method
A technology of Czochralski single crystal and Hough transform, applied in single crystal growth, chemical instruments and methods, self-melting liquid pulling method, etc. It can reduce the amount of calculation, improve the accuracy, and improve the robustness of the algorithm.
Active Publication Date: 2007-08-01
XIAN ESWIN MATERIAL TECH CO LTD +1
View PDF0 Cites 22 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] 2. Since the aperture image during crystal growth is a distorted and incomplete ring, in order to achieve reliable detection, traditional image processing methods require the lowest point of the arc in the image as the positioning reference. This requirement applies to the observation window and diversion barrel of the single crystal furnace The design brings a lot of inconvenience
[0006] 3. In order to reflect the strong radiant heat in the furnace, the quartz glass of the camera observation window must be metal-coated
Since the time interval of the interference is similar to the time constant of the natural change of the diameter signal, the low-pass filter based on the frequency difference will cause a large lag in the measurement signal, resulting in a decrease in the quality of the diameter control during the approach process
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0070] In the example shown in FIG. 5 , a=496 (pixels), r=1080 (pixels), ratio coefficient k=0.278 are obtained after clustering, and the measured crystal diameter is 300.24 mm.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM

Abstract
The invention relates to a hough transformation- base method for measuring the diameter of vertical pulling single crystal silicon bar. It comprises following steps: collecting image during crystal growth, pretreating image, checking crystal growth information with Hough transforamtion and getting diameter, X coordinate for circle center and Y coordinate for circle center, average value clustering for space curve crossing point and getting accurate diameter measuring value. The invention employs one pick-up head and measures diameter for seeding and constant diameter process, the measuring accuracy is high and speed is fast.
Description
technical field [0001] The invention belongs to the technical field of photoelectric detection, and relates to a method for measuring the diameter of a silicon rod when the Czochralski method is used to produce single crystal silicon, in particular to an image measuring method for the diameter of a silicon rod with Hough transform as the core. Background technique [0002] As the main basic material of the semiconductor industry, silicon single crystal has played a pivotal role in the development of the semiconductor industry. At present, the Czochralski method is the main method for manufacturing single crystal silicon. In the process of manufacturing single crystal silicon by the Czochralski method, it is the basic requirement to ensure the growth of crystals with equal diameters. Therefore, accurate detection and automatic control of crystal diameters are key technologies to ensure crystal quality and yield. With the development trend of silicon wafer manufacturing to lar...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline

IPC IPC(8): C30B15/26
Inventor 刘丁赵跃季瑞瑞任海鹏
Owner XIAN ESWIN MATERIAL TECH CO LTD
Features
- Generate Ideas
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
Why Patsnap Eureka
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com