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Semiconductor integrated circuit

A technology of integrated circuits and semiconductors, applied in the field of semiconductor integrated circuits, which can solve the problem of sacrificing the operating speed of class D amplifiers

Inactive Publication Date: 2007-09-26
YAMAHA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this reason, there is a problem in that the operating speed of the class D amplifier is sacrificed by applying this technique

Method used

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  • Semiconductor integrated circuit
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Examples

Experimental program
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Effect test

Embodiment 1

[0023] FIG. 1 is a circuit diagram showing the structure of a class D amplifier 600 according to Embodiment 1 of the semiconductor integrated circuit of the present invention. The class D amplifier 600 has a high potential power supply terminal 601, a low potential power supply terminal 602, an input terminal 603, and output terminals 604A and 604B. The high-potential power supply terminal 601 is connected to the positive electrode of the power supply VDD, and the low-potential power supply terminal 602 is connected to the negative electrode of the power supply VDD and grounded. In the example shown in the figure, a single power supply is used. For this reason, the low potential power supply terminal 602 is grounded. However, in the case of using the structure described below, even if the structure uses a power supply generating a positive power supply voltage and a power supply generating a negative power supply voltage, it is preferable that the high-potential power supply ...

Embodiment 2

[0035] 6 and 7 are circuit diagrams showing configurations of a class D amplifier 100A having ringing reduction circuits 40NA and 40PA according to Embodiment 2 of the present invention. FIG. 6 shows the circuit configuration of the ringing reduction circuit 40NA, and FIG. 7 shows the circuit configuration of the ringing reduction circuit 40PA.

[0036] The class D amplifier 100A has a high potential power supply terminal 101 , a low potential power supply terminal 102 , an input terminal 103 and an output terminal 104 . The high potential power supply terminal 101 is connected to the positive electrode of the power supply VDD via the high potential power supply line 131 arranged outside the class D amplifier 100A, and the low potential power supply terminal 102 is connected to the power supply VDD via the low potential power supply line 132 arranged outside the class D amplifier 100A. negative and grounded. In the illustrative example, since a single power supply is used, th...

Embodiment 3

[0048] 9 and 10 show configuration circuit diagrams of a class D amplifier 100B having ringing reduction circuits 40PB and 40NB according to Embodiment 3 of the present invention. FIG. 9 shows the circuit configuration of the ringing reduction circuit 40NB, and FIG. 10 shows the circuit configuration of the ringing reduction circuit 40PB. In FIGS. 9 and 10 , components having corresponding components to those of FIGS. 6 and 7 referred to above are hereafter provided with the same reference symbols and will not be described again.

[0049] In Embodiment 2, the comparators 410 and 420 as ringing detectors detect the output signal by comparing the level of the output line 120 with the level PVDDI of the high-potential power supply line 111 or the level PVSSI of the low-potential power supply line 112 Ringing occurs in OUT.

[0050] However, when the switching current of the output buffer circuit 30 flows through the parasitic inductance 141 or 142, a huge counter electromotive f...

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PUM

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Abstract

An N-channel transistor is provided as a switch between the high-potential power supply line and the low-potential power supply line. A high pass filter consists of capacitors and resistors. When the voltage between the high-potential power supply line and the low-potential power supply line starts to oscillate through switching operations, the high-pass filter passes the high-pass component of the voltage, thereby turning on the N-channel transistor to reduce ringing.

Description

technical field [0001] The present invention relates to a semiconductor integrated circuit, and more particularly, to a semiconductor integrated circuit suitable for a circuit for pulse-driven load such as a class D amplifier. Background technique [0002] As is well known, a class D amplifier is used to drive an output transistor on / off a load and to achieve conduction to the load intermittently. During intermittent conduction to the load, the current that flows into the parasitic inductance of the power supply line or ground conductor of the class D amplifier changes strongly. Therefore, noise is generated on these parasitic inductances, causing ringing in the output signal of the class D amplifier. Said ringing leads to degradation of the reproduction quality of the class D amplifier and, moreover, damage to the load or to the class D amplifier. For this reason, it is desirable to reduce the ringing. Patent Document 1 proposes a time gradient technique for reducing the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/00H03F3/217
Inventor 辻信昭川合博贤
Owner YAMAHA CORP
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