Thermoelectric material and thermoelectric conversion element using same

A technology of thermoelectric conversion devices and thermoelectric materials, which is applied in the direction of thermoelectric devices that only use the Peltier or Seebeck effect, thermoelectric device junction lead-out materials, etc., can solve the problem that the thermoelectric conversion performance of semi-Heusler-based thermoelectric conversion materials does not reach that of Bi-Te-based The same level of materials and other issues, to achieve high-performance results

Inactive Publication Date: 2007-10-03
KK TOSHIBA
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Problems solved by technology

[0022] However, the thermoelectric conversion performance of related semi-Heusler-based the...

Method used

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  • Thermoelectric material and thermoelectric conversion element using same
  • Thermoelectric material and thermoelectric conversion element using same
  • Thermoelectric material and thermoelectric conversion element using same

Examples

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Embodiment approach

[0111] A thermoelectric material according to the present invention will be described with reference to examples.

[0112] Table 1 shows the results of Example 1 and Comparative Example 1 for comparison purposes.

[0113] Example 1 shown in Table 1 will be described as a representative example. As raw materials, Ti with a purity of 99.9%, Zr with a purity of 99.9%, Hf with a purity of 99.9%, Ni with a purity of 99.99%, and Sn with a purity of 99.99% were prepared and weighed to obtain 0.3 Zr 0.35 f 0.35 ) Alloy represented by NiSn. After the weighed raw materials are mixed together and loaded into the water-cooled copper furnace in the electric arc furnace, the vacuum is evacuated to 2×10 -3 Pa vacuum level.

[0114] Next, high-purity Ar gas having a purity of 99.999% was introduced at 0.04 MPa to form a reduced-pressure Ar atmosphere, followed by arc melting. After melting, it is quenched in a water-cooled copper hearth to obtain the metal block. The metal block is vacuu...

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Abstract

The thermoelectric material is represented by the following composition formula of (Tia1Zrb1Hfc1)xAyB100-x-y, in which element A is at least one element selected from the group consisting of Ni and Co, element B is at least one element selected from the group consisting of Sn and Sb, 0<=a1<=1, 0<=b1<=1, 0<=c1<=1, and a1+b1+c1=1 hold, and 30<=x<=35 and 30<=y<=35 hold, and the thermoelectric material comprises a phase having an MgAgAs type crystal structure as a major phase. In this thermoelectric material, the density of the thermoelectric material is more than 99.0% of the true density. When this thermoelectric material is used for either one or both of p-type elements and n-type elements, a thermoelectric conversion device having high thermoelectric conversion performance is realized.

Description

technical field [0001] The invention relates to a thermoelectric material with thermoelectric effect, especially a thermoelectric material using a semi-Heusler compound and a thermoelectric conversion device using the thermoelectric material. Background technique [0002] In recent years, as thinking about global environmental issues has increased, thermoelectric cooling devices utilizing the Peltier effect, which are fluorine-free cooling devices, have attracted increasing attention. In addition, in consideration of global warming, in order to reduce carbon dioxide emissions, thermoelectric power generation devices that directly convert unused waste heat energy into electrical energy have also begun to attract attention. [0003] Incidentally, the performance index Z of the thermoelectric material can be represented by the following formula (1). [0004] Z=α 2 ·σ / κ(=Pf / κ) (1) [0005] In the above formula (1), α represents the Seebeck coefficient of the thermoelectric ma...

Claims

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Application Information

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IPC IPC(8): H01L35/18H01L35/20H01L35/32C22C27/00C22C13/00C22C11/00C22C30/00C22C45/00
Inventor 岩抚直和近藤成仁常冈治
Owner KK TOSHIBA
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