Optical information recording medium
A technology for recording media, optical information, applied in the direction of optical record carriers, optical recording heads, record carrier materials, etc.
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Embodiment 1 and comparative example 1
[0541] In order to compare the InGeSbTe system of the present invention as a recording layer with the conventionally known InAgSbTe quaternary system, as shown in Table-1, media with almost exactly the same recording layer composition and layer structure were prepared except for Ag and Ge compositions.
[0542] Except for the replacement of Ge and Ag, the other compositions of the two recording layers can be considered to be in the very same range within the measurement error range. The difference in film thickness of the lower protective layer is to adjust the reflectance Rtop of the medium to be the same. Such correction is necessary because the reflectance of the recording layer is slightly different, but it is necessary to make the correction to make the light absorption efficiency of the recording layer the same and to make the influence of the thermal damage caused by the reproducing light the same and to make the comparison. Since the film thickness of the recording...
Embodiment 2
[0564] Provide a lower protective layer (ZnS) with various film thicknesses on the substrate 80 (SiO 2 ) 20 , recording layer Ge 0.05 Sb 0.73 Te 0.22 , Upper protective layer (ZnS) 80 (SiO 2 ) 20 and reflective layer Al 0.995 Ta 0.005 . Table 3 shows the film thickness of each layer. All thin films are produced by sputtering without breaking the vacuum.
[0565] The reflective layer is formed in a vacuum up to 2×10 -4 Pa below, Ar pressure 0.54Pa, film forming speed 1.3nm / sec under the conditions.
[0566] Its volume resistivity is 55nΩ·m, and its area resistivity is 0.28Ω / □.
[0567] Impurities such as oxygen and nitrogen are considered to be below the detection sensitivity of X-ray excitation photoelectron spectroscopy, and are considered to be less than 1 atomic % in total. (ZnS) 80 (SiO 2 ) 20 The film density of the protective layer is 3.50g / cm 3 , is the theoretical bulk density of 3.72 g / cm 3 94% of. Also, the recording layer...
Embodiment 3
[0596] In addition to the composition of the recording layer using Ge 0.05 Sb 0.71 Te 0.24 In addition, the same layer structure as in Example 2 was used to make media, and the film layers and evaluation results of each layer are shown in Table-4. Measurements were performed using an optical system with NA=0.63.
[0597] Same as Table-3, take the best α for various layer structures 1 , αc and β n-1 , and also set the Pw and Pe that can make the jitter the lowest, and evaluate the jitter.
[0598] For Example 3 (a), as in Example 2 (a1), good characteristics can be obtained when the recording linear velocity is 1x speed and 2x speed, but at 9 m / s, the jitter is higher than that of Example 2 (a1) by 1 ~2%.
[0599] Also, for Examples 3 (a) to (f) in which the film thickness of the upper protective layer was 30 nm, the jitter was less than 10%, and it was less than 13% after 100 overwrites. For the thicker examples 3(g) to (i) in which the film thickness of th...
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