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Chemical machinery grinding composition

A technology of chemical machinery and composition, applied in other chemical processes, chemical instruments and methods, electrical components, etc., can solve problems such as the use of surfactants that are not mentioned, and achieve the effect of reducing the grinding rate and reducing metal residues

Inactive Publication Date: 2007-10-24
EPOCH MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

The purpose of this patent is mainly to prevent copper sinking, and does not mention the improvement of grinding rate and copper residue on the wafer surface. In addition, this patent does not mention the use of surfactants

Method used

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  • Chemical machinery grinding composition
  • Chemical machinery grinding composition
  • Chemical machinery grinding composition

Examples

Experimental program
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Effect test

Embodiment 1～9

[0091] According to the following table 1, at room temperature, 2.00wt% of abrasives, 0.05wt% of corrosion inhibitors, 0.4wt% of adipic acid, 0.2wt% of surfactants, metal residue inhibitors and selective addition of formic acid ( Contents are shown in Table 1) were mixed, and then an appropriate amount of aqueous medium was added until the total weight was 100wt%, so as to prepare a mixture respectively. Then mix the mixture and the oxidant according to the ratio of oxidant:mixture=1:11, and test whether the pH value is between 3 and 4. If it is not within this pH range, then use hydrochloric acid or ammonia water to The pH value was adjusted to 3-4, and finally the chemical mechanical polishing compositions of Examples 1-9 were respectively obtained.

[0092] The chemical mechanical polishing compositions of Examples 1-9 were respectively tested according to the above-mentioned testing and analysis procedures, and the obtained results are summarized in Table 1 below.

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Abstract

The invention discloses a chemical mechanical grinding composition, which comprises the following parts with pH value between 2 and 5: aqueous dielectric, grinding material, etching inhibitor, surface activator, diacid compound and residual metal inhibitor, wherein the residual metal inhibitor is composed of the compound as formula (I), compound as formula (II), compound as formula (III), compound as formula (IV), compound as formula (V) and these compound composition; the structure of formula (II)-(V) and the definition of each substituted group are limited by instruction and power requstment; the chemical mechanical grinding composition can be used on the grinding semiconductor crystal circle surface, which can obtain not bad metal grinding velocity and reduce metal pit and residual metal effectively.

Description

technical field [0001] The invention relates to a chemical mechanical polishing composition, in particular to a chemical mechanical polishing composition used in semiconductor manufacturing process and containing a metal residual inhibitor. Background technique [0002] Chemical mechanical polishing ("CMP") technology is a flattening technology developed to solve the problem of difficulty in focusing in the lithography process due to the difference in coating height during integrated circuit (IC) manufacturing. . Chemical mechanical polishing technology was first used in a small amount in the manufacture of 0.5 micron components, but as the size of the components shrinks, the probability of chemical mechanical polishing technology being applied also increases, and it has become an indispensable planarization technology in the industry . [0003] In the semiconductor wafer process, there are two types of layers that need to be polished, one type is the interlayer (interlaye...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14H01L21/304
Inventor 侯惠芳刘文政陈宝丞陈彦良陈瑞清
Owner EPOCH MATERIAL CO LTD
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