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Chemical machinery grinding composition

A chemical machinery and composition technology, applied in other chemical processes, chemical instruments and methods, electrical components, etc., can solve the problem of not mentioning the use of surfactants, and achieve the effect of reducing the grinding rate and reducing metal residues

Inactive Publication Date: 2009-10-14
EPOCH MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The purpose of this patent is mainly to prevent copper sinking, and does not mention the improvement of grinding rate and copper residue on the wafer surface. In addition, this patent does not mention the use of surfactants

Method used

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  • Chemical machinery grinding composition
  • Chemical machinery grinding composition
  • Chemical machinery grinding composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～9

[0091] According to Table 1, at room temperature, 2.00wt% abrasive, 0.05wt% corrosion inhibitor, 0.4wt% adipic acid, 0.2wt% surfactant, metal residue inhibitor and selective addition of formic acid ( The content is as shown in Table 1) was mixed, and then an appropriate amount of aqueous medium was added until the total weight was 100% by weight to prepare a mixture. Then according to the ratio of oxidant:mixture=1:11, mix the mixture and the oxidant, and test whether the pH value is between 3 and 4. If it is not within this pH range, use hydrochloric acid or ammonia to The pH value is adjusted to 3 to 4, and finally the chemical mechanical polishing composition of Examples 1 to 9 is obtained respectively.

[0092] The chemical mechanical polishing compositions of Examples 1 to 9 were tested according to the above-mentioned test and analysis procedures, and the obtained results are summarized in Table 1 below.

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Abstract

A chemical mechanical polishing composition having a pH range of 2 to 5 and comprising a mixture of the following components: an aqueous medium, an abrasive, a corrosion inhibitor, a surfactant, diacids Compound and a metal residue inhibitor, the metal residue inhibitor is selected from the group consisting of compounds represented by the following chemical formula: the formula (I), the formula (II), the formula (III), the formula (IV), the formula (V) and the combination of these compounds, wherein the structures of the formulas (II) to (V) and the definitions of each substituent are as defined in the specification and claims. When the chemical mechanical polishing composition of the present invention is used for polishing the surface of a semiconductor wafer, a good metal grinding rate can be obtained, metal depressions can be effectively reduced, and metal residues on the wafer surface can be reduced.

Description

Technical field [0001] The present invention relates to a chemical mechanical polishing composition, in particular to a chemical mechanical polishing composition used in a semiconductor manufacturing process and containing a metal residue inhibitor. Background technique [0002] Chemical mechanical polishing ("CMP") technology is a planarization technology developed to solve the problem of difficulty in focusing in the lithography process due to the difference in coating level during integrated circuit (IC) manufacturing. . The chemical mechanical polishing technology was first used in a small amount in the manufacture of 0.5 micron components, but as the size of the components shrinks, the probability of the chemical mechanical polishing technology being applied increases, and it has become an indispensable planarization technology in the industry. . [0003] In the semiconductor wafer manufacturing process, there are two types of layers that need to be polished. One type is an ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K3/14H01L21/304
Inventor 侯惠芳刘文政陈宝丞陈彦良陈瑞清
Owner EPOCH MATERIAL CO LTD
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