The present invention relates to a step type infrared detector. A CMOS measurement circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using a CMOS process, and in the infrared detector, the position, corresponding to a columnar structure, of the surface, close to the CMOS measurement circuit system, of a suspended micro-bridge structure is in a stepped shape. The surface, not in contact with the columnar structure, of the suspended micro-bridge structure is higher than the surface, in contact with the columnar structure, of the suspended micro-bridge structure, the columnar structure is a solid columnar structure, and the reinforcing structure corresponds to the columnar structure and is located on the side, away from the CMOS measuring circuit system, of the columnar structure. According to the technical scheme, the problems of low performance, low pixel scale, low yield, poor consistency and the like of a traditional MEMS process infrared detector are solved, the sinking degree of the middle area of the sacrificial layer is effectively reduced, the planarization degree of the whole infrared detector is optimized, and the structural stability of the infrared detector is improved.