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Sputtering target, a joined type sputtering target and a method of making such a joined type sputtering target

A production method and sputtering target technology, which are applied in the field of sputtering targets, can solve the problems of poor heat resistance, corrosion resistance, poor adhesion, and can not fully withstand electrical wiring, etc., and achieve excellent corrosion resistance and suppression of abnormal discharge. the effect of

Active Publication Date: 2007-10-31
ULVAC INC
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  • Abstract
  • Description
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Problems solved by technology

Generally, these films are poor in any of the heat resistance, corrosion resistance, and adhesiveness required as an electrical wiring film, so there is a problem that they cannot sufficiently withstand the process of forming electrical wiring.

Method used

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  • Sputtering target, a joined type sputtering target and a method of making such a joined type sputtering target
  • Sputtering target, a joined type sputtering target and a method of making such a joined type sputtering target

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Embodiment Construction

[0015] The sputtering target of the present invention is a sputtering target containing Mo and Ti as main components, and can form a base film of a film made of a metal such as Au, Cu, or an alloy containing at least one of them.

[0016] In order to form a film having excellent adhesion to such a metal film or alloy film and also excellent corrosion resistance, the sputtering target of the present invention contains Ti more than 50 atomic % and not more than 60 atomic %. At this time, in order to improve and stabilize the properties of the metal thin film obtained by sputtering, it is desirable to contain as few impurities as possible, so the total of Mo and Ti excluding gas components is preferably a purity of 99.9% by mass or more. .

[0017] In addition, the oxygen concentration of the sputtering target is preferably 1000 to 3500 ppm. Generally, the lower the oxygen concentration, the better. However, when bonding two or more sputtering targets in order to produce a bonde...

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Abstract

[Object] It is to provide a sputtering target which has an excellent adhesion to films made of Au, Cu or an alloy containing at least one of Au and Cu and also an excellent corrosion resistance and which can be used to form an Mo-Ti alloy film over a large-sized substrate.

Description

technical field [0001] The present invention relates to a sputtering target, a bonded sputtering target, and a manufacturing method thereof, and particularly to a sputtering target for forming a Mo—Ti alloy film, a bonded sputtering target, and a manufacturing method thereof. Background technique [0002] In recent years, thin-film transistor liquid crystal displays (TFT-LCDs) have used films made of low-resistance metals such as Al, Cu, Ag, and Au, or alloys containing at least one of them as electrical wiring films. Generally, these films are poor in any of heat resistance, corrosion resistance, and adhesiveness required as an electrical wiring film, and thus have a problem that they cannot sufficiently withstand the process of forming electrical wiring. [0003] Therefore, in order to solve the above-mentioned problems, studies have been made on forming thin films of Cr, Mo, Ti, etc., which are high-melting-point metals, as base films for substrates. In view of heat resi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/14C23C14/54
CPCC23C14/3407C23C14/3414C22C14/00C23C14/542C23C14/548
Inventor 新田纯一伊藤隆治松本博伊藤学
Owner ULVAC INC
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